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GeneSiC Semiconductor
GeneSiC Semiconductor is a semiconductor company that focuses on the design and manufacturing of silicon carbide (SiC) power devices and modules. They provide innovative solutions for power electronics applications, including power supplies, motor drives, inverters, and electric vehicle charging systems. GeneSiC's SiC-based devices offer higher efficiency, faster switching speeds, and better thermal performance compared to traditional silicon-based devices, contributing to improved energy efficiency and power density in various power conversion systems.Related Parts
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GA20JT12-263
SiC (Silicon Carbide Junction Transistor) Tube 60m Ω @ 20A 3091pF @ 800V 1200V TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
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2N7639-GA
SiC (Silicon Carbide Junction Transistor) Bulk 105m Ω @ 15A 1534pF @ 35V 650V TO-257-3
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GB05MPS33-263
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 3V @ 5A -55°C~175°C 10μA @ 3kV TO-263-8, D2Pak (7 Leads + Tab), TO-263CA Surface Mount
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GC10MPS12-252
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.8V @ 10A -55°C~175°C 10μA @ 1200V Tape & Reel (TR) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount
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GA50JT06-258
SiC (Silicon Carbide Junction Transistor) Bulk 25m Ω @ 50A 600V TO-258-3, TO-258AA
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2N7636-GA
SiC (Silicon Carbide Junction Transistor) Tube 415m Ω @ 4A 324pF @ 35V 650V TO-276AA
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GB10MPS17-247
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.8V @ 10A -55°C~175°C 12μA @ 1700V 2-Termination TO-247-2 Through Hole
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GA10SICP12-263
SiC (Silicon Carbide Junction Transistor) Tube 100m Ω @ 10A 1403pF @ 800V 1200V TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
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GA03JT12-247
SiC (Silicon Carbide Junction Transistor) Tube 460m Ω @ 3A 1200V TO-247-3
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GA05JT01-46
SiC (Silicon Carbide Junction Transistor) Bulk 240m Ω @ 5A 100V TO-46-3
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GC08MPS12-252
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.8V @ 8A -55°C~175°C 7μA @ 1200V Tape & Reel (TR) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount
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S6G
Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.1V @ 6A -65°C~175°C 10μA @ 100V 1-Termination Bulk DO-203AA, DO-4, Stud Chassis, Stud Mount
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GA05JT12-263
SiC (Silicon Carbide Junction Transistor) Tube 1200V TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
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GA20SICP12-247
SiC (Silicon Carbide Junction Transistor) Tube 50m Ω @ 20A 3091pF @ 800V 1200V TO-247-3
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