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GeneSiC Semiconductor
GeneSiC Semiconductor is a semiconductor company that focuses on the design and manufacturing of silicon carbide (SiC) power devices and modules. They provide innovative solutions for power electronics applications, including power supplies, motor drives, inverters, and electric vehicle charging systems. GeneSiC's SiC-based devices offer higher efficiency, faster switching speeds, and better thermal performance compared to traditional silicon-based devices, contributing to improved energy efficiency and power density in various power conversion systems.Related Parts
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2N7637-GA
SiC (Silicon Carbide Junction Transistor) Tube 170m Ω @ 7A 720pF @ 35V 650V TO-257-3
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GA10JT12-247
SiC (Silicon Carbide Junction Transistor) Tube 140m Ω @ 10A 1200V TO-247-3
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S16MR
Standard, Reverse Polarity Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.1V @ 16A -65°C~175°C 10μA @ 50V 1-Termination Bulk DO-203AA, DO-4, Stud Chassis, Stud Mount
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GA05JT12-263
SiC (Silicon Carbide Junction Transistor) Tube 1200V TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
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GA03JT12-247
SiC (Silicon Carbide Junction Transistor) Tube 460m Ω @ 3A 1200V TO-247-3
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GC50MPS06-247
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 175°C Max TO-247-2 Through Hole
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1N1199A
Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.1V @ 12A -65°C~200°C 10μA @ 50V 1-Termination Bulk DO-203AA, DO-4, Stud Chassis, Stud Mount
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GA50JT12-247
SiC (Silicon Carbide Junction Transistor) Tube 25m Ω @ 50A 7209pF @ 800V 1200V TO-247-3
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2N7636-GA
SiC (Silicon Carbide Junction Transistor) Tube 415m Ω @ 4A 324pF @ 35V 650V TO-276AA
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GA20JT12-247
SiC (Silicon Carbide Junction Transistor) Tube 70m Ω @ 20A 1200V TO-247-3
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1N3879R
Standard, Reverse Polarity Diode Rectifier Fast Recovery =< 500ns, > 200mA (Io) 1.4V @ 6A -65°C~150°C 15μA @ 50V Bulk DO-203AA, DO-4, Stud Chassis, Stud Mount
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1N4594
Standard Diode Rectifier Standard Recovery >500ns, > 200mA (Io) 1.5V @ 150A -60°C~200°C 4.5mA @ 1000V 1-Termination Bulk DO-205AA, DO-8, Stud Chassis, Stud Mount
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GA08JT17-247
SiC (Silicon Carbide Junction Transistor) Tube 250m Ω @ 8A 1700V TO-247-3
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GA100SCPL12-227E
GA100SCPL12-227E datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from GeneSiC Semiconductor stock available at Utmel
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