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GeneSiC Semiconductor
GeneSiC Semiconductor is a semiconductor company that focuses on the design and manufacturing of silicon carbide (SiC) power devices and modules. They provide innovative solutions for power electronics applications, including power supplies, motor drives, inverters, and electric vehicle charging systems. GeneSiC's SiC-based devices offer higher efficiency, faster switching speeds, and better thermal performance compared to traditional silicon-based devices, contributing to improved energy efficiency and power density in various power conversion systems.Related Parts
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GA05JT12-263
SiC (Silicon Carbide Junction Transistor) Tube 1200V TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
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GA50JT12-247
SiC (Silicon Carbide Junction Transistor) Tube 25m Ω @ 50A 7209pF @ 800V 1200V TO-247-3
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GC50MPS06-247
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 175°C Max TO-247-2 Through Hole
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2N7639-GA
SiC (Silicon Carbide Junction Transistor) Bulk 105m Ω @ 15A 1534pF @ 35V 650V TO-257-3
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GA10JT12-247
SiC (Silicon Carbide Junction Transistor) Tube 140m Ω @ 10A 1200V TO-247-3
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GA50JT06-258
SiC (Silicon Carbide Junction Transistor) Bulk 25m Ω @ 50A 600V TO-258-3, TO-258AA
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GA10SICP12-263
SiC (Silicon Carbide Junction Transistor) Tube 100m Ω @ 10A 1403pF @ 800V 1200V TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
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GA100JT12-227
SiC (Silicon Carbide Junction Transistor) Tube 10m Ω @ 100A 14400pF @ 800V 1200V SOT-227-4, miniBLOC
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GA50JT12-263
TO-263
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2N7640-GA
SiC (Silicon Carbide Junction Transistor) Bulk 105m Ω @ 16A 1534pF @ 35V 650V TO-276AA
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GA03JT12-247
SiC (Silicon Carbide Junction Transistor) Tube 460m Ω @ 3A 1200V TO-247-3
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GA05JT12-247
SiC (Silicon Carbide Junction Transistor) Tube 280m Ω @ 5A 1200V TO-247-3
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GA20JT12-247
SiC (Silicon Carbide Junction Transistor) Tube 70m Ω @ 20A 1200V TO-247-3
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GA20JT12-263
SiC (Silicon Carbide Junction Transistor) Tube 60m Ω @ 20A 3091pF @ 800V 1200V TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
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