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GeneSiC Semiconductor
GeneSiC Semiconductor is a semiconductor company that focuses on the design and manufacturing of silicon carbide (SiC) power devices and modules. They provide innovative solutions for power electronics applications, including power supplies, motor drives, inverters, and electric vehicle charging systems. GeneSiC's SiC-based devices offer higher efficiency, faster switching speeds, and better thermal performance compared to traditional silicon-based devices, contributing to improved energy efficiency and power density in various power conversion systems.Related Parts
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GA10SICP12-247
SIC CO-PACK SJT/RECT 10A 1.2KV
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2N7640-GA
SiC (Silicon Carbide Junction Transistor) Bulk 105m Ω @ 16A 1534pF @ 35V 650V TO-276AA
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2N7639-GA
SiC (Silicon Carbide Junction Transistor) Bulk 105m Ω @ 15A 1534pF @ 35V 650V TO-257-3
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GA50SICP12-227
SIC CO-PACK SJT/RECT 50A 1.2KV
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GA100JT17-227
SiC (Silicon Carbide Junction Transistor) Tube 10m Ω @ 100A 14400pF @ 800V 1700V SOT-227-4, miniBLOC
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GC50MPS12-247
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.8V @ 50A -55°C~175°C 40μA @ 1200V TO-247-2 Through Hole
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2N7637-GA
SiC (Silicon Carbide Junction Transistor) Tube 170m Ω @ 7A 720pF @ 35V 650V TO-257-3
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GA20JT12-263
SiC (Silicon Carbide Junction Transistor) Tube 60m Ω @ 20A 3091pF @ 800V 1200V TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
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GC50MPS06-247
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 175°C Max TO-247-2 Through Hole
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GC08MPS12-252
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.8V @ 8A -55°C~175°C 7μA @ 1200V Tape & Reel (TR) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount
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GB10SLT12-252
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 2V @ 10A -55°C~175°C 250μA @ 1200V Tube TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount
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GB01SLT12-220
Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 1.8V @ 1A -55°C~175°C 2μA @ 1200V Bulk TO-220-2 Through Hole
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GA20SICP12-247
SiC (Silicon Carbide Junction Transistor) Tube 50m Ω @ 20A 3091pF @ 800V 1200V TO-247-3
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GA10JT12-247
SiC (Silicon Carbide Junction Transistor) Tube 140m Ω @ 10A 1200V TO-247-3
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