Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Ambient Temperature Range High | Supplier Device Package | Number of Terminals | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Seated Height-Max | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
.png "V29F010B-120PC") |
V29F010B-120PC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V65803S133BGI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Active | 3 (168 Hours) | Non-RoHS Compliant | 119-BGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V65803 | 119-PBGA (14x22) | 4.2ns | 9Mb 512K x 18 | Volatile | 3.135V~3.465V | 133MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7024S25J8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 84-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7024 | 64Kb 4K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1230AB-200IND | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2002 | Obsolete | 1 (Unlimited) | 28 | EAR99 | 5V | Non-RoHS Compliant | Contains Lead | No | 28 | 28-DIP Module (0.600, 15.24mm) | 256 kb | 200GHz | Through Hole | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | 5V | DS1230AB | 28 | NO | 2.54mm | SRAMs | 5V | 256Kb 32K x 8 | Non-Volatile | 0.085mA | 4.75V~5.25V | 32KX8 | 8 | 8b | 0.005A | 200 ns | NVSRAM | Parallel | 200ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MB85RC64VPNF-G-JNERE1 | Fujitsu Electronics America, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | 2015 | Active | 1 (Unlimited) | 85°C | -40°C | RoHS Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C, Serial | 64 kb | 1MHz | Surface Mount | -40°C~85°C TA | FRAM (Ferroelectric RAM) | 8-SOP | 64Kb 8K x 8 | Non-Volatile | 3V~5.5V | 8b | 1MHz | FRAM | I2C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MB85RS64PNF-G-JNERE1 | Fujitsu Electronics America, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | FRAM (Ferroelectric RAM) | 8-SOP | 64Kb 8K x 8 | Non-Volatile | 2.7V~3.6V | 20MHz | FRAM | SPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT46V64M4FG-75:G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2007 | Discontinued | 2 (1 Year) | 60 | EAR99 | 2.5V | 1 | 14mm | Non-RoHS Compliant | Contains Lead | 60 | AUTO/SELF REFRESH | 60-FBGA | not_compliant | 256 Mb | Surface Mount | 0°C~70°C TA | SDRAM - DDR | SYNCHRONOUS | 1.2mm | 8542.32.00.24 | 1 | 150mA | e0 | TIN LEAD SILVER | BOTTOM | 235 | 2.5V | 30 | MT46V64M4 | 60 | 1mm | 2.3V | Not Qualified | 2.7V | 3-STATE | 750ps | 256Mb 64M x 4 | Volatile | 15b | 2.3V~2.7V | 64MX4 | 4 | 133MHz | 0.004A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
7024S35PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2000 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | TQFP | Parallel | 5.5V | 4.5V | 64 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | YES | 0.5mm | SRAMs | 5V | 3-STATE | 35 ns | 8kB | RAM, SDR, SRAM | 24b | 4KX16 | 0.015A | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT7164L20Y | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Rail/Tube | 2009 | 3 (168 Hours) | 28 | EAR99 | 70°C | 0°C | 5V | 1 | Non-RoHS Compliant | 28 | Parallel | 5.5V | not_compliant | 4.5V | 64 kb | CMOS | 3.556mm | 1 | 90mA | e0 | DUAL | J BEND | 225 | 5V | 30 | 28 | COMMERCIAL | SRAMs | Not Qualified | 5V | 3-STATE | 20 ns | RAM, SRAM - Asynchronous | 13b | 8KX8 | 8 | Asynchronous | 0.00006A | 8b | YES | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FM25V02A-GTR | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | F-RAM™ | Active | 3 (168 Hours) | 8 | EAR99 | 3.3V | ROHS3 Compliant | Lead Free | Tin | 8 | 8-SOIC (0.154, 3.90mm Width) | 256 kb | 1.727mm | Surface Mount | -40°C~85°C TA | FRAM (Ferroelectric RAM) | SYNCHRONOUS | 1 | 150μA | e3 | DUAL | 260 | 3.3V | 30 | 1.27mm | 2V | 3.6V | 85°C | 9 ns | 256Kb 32K x 8 | Non-Volatile | 2V~3.6V | 8 | 8b | 40MHz | FRAM | SPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7005L15J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2005 | no | Active | 1 (Unlimited) | 68 | EAR99 | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | PLCC | Parallel | 5.5V | 4.5V | 64 kb | 24mm | 3.63mm | CMOS | 1 | 260mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 68 | COMMERCIAL | SRAMs | 5V | 3-STATE | 15 ns | 8kB | RAM, SDR, SRAM | 26b | 8KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V416YL10Y8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2008 | no | 44 | 3A991.B.2.A | 70°C | 0°C | 28.575mm | Non-RoHS Compliant | 44 | Parallel | 10.16mm | CMOS | 3.683mm | 8542.32.00.41 | 1 | e0 | TIN LEAD | DUAL | J BEND | 225 | 3.3V | 30 | 44 | COMMERCIAL | YES | 1.27mm | 3V | Not Qualified | 3.6V | RAM, SRAM - Asynchronous | 256KX16 | 16 | 4194304 bit | 10 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S26KS512SDPBHM020 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tray | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | 6mm | CMOS | SYNCHRONOUS | 1mm | 8542.32.00.51 | 1 | BOTTOM | BALL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | AUTOMOTIVE | YES | 1mm | R-PBGA-B24 | 1.7V | 125°C | -40°C | 1.95V | AEC-Q100; TS 16949 | 64MX8 | 8 | 536870912 bit | FLASH | PARALLEL | 96 ns | 1.8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7024L35PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2000 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | TQFP | Parallel | 5.5V | 4.5V | 64 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 210mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 35 ns | 8kB | RAM, SDR, SRAM | 24b | 4KX16 | Asynchronous | 0.0015A | 16b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V65603S150BQI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tape & Reel | 2007 | no | Active | 3 (168 Hours) | 165 | 85°C | -40°C | 3.3V | 1 | 15mm | RoHS Compliant | Contains Lead | No | 165 | PIPELINED ARCHITECTURE | Parallel | 3.465V | 3.135V | 9 Mb | 150MHz | 13mm | 1.2mm | CMOS | 1 | 345mA | e0 | TIN LEAD | BOTTOM | BALL | 225 | 3.3V | 20 | 165 | INDUSTRIAL | SRAMs | 3-STATE | 3.8 ns | RAM, SRAM | 18b | 256KX36 | Synchronous | 0.06A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71T75702S85PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2005 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 20mm | Non-RoHS Compliant | FLOW-THROUGH ARCHITECTURE | LQFP | Parallel | not_compliant | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 2.5V | 20 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 2.375V | SRAMs | Not Qualified | 2.5V | 2.625V | 3-STATE | RAM, SRAM | 0.225mA | 512KX36 | 36 | 18874368 bit | 90MHz | 0.04A | 8.5 ns | COMMON | 2.38V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V416VL12PH | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2005 | yes | 3 (168 Hours) | 44 | 3A991.B.2.A | 70°C | 0°C | 18.41mm | Non-RoHS Compliant | TSOP | Parallel | unknown | 10.16mm | CMOS | 1.2mm | 8542.32.00.41 | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 3.3V | 30 | 44 | COMMERCIAL | YES | 0.8mm | R-PDSO-G44 | 3V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.17mA | 256KX16 | 16 | 4194304 bit | 0.01A | 12 ns | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S40410081B1B2W003 | SkyHigh Memory Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 100 | 18mm | unknown | 14mm | CMOS | SYNCHRONOUS | 1.4mm | 1 | BOTTOM | BALL | 3V | OTHER | YES | 1mm | R-PBGA-B100 | 2.7V | 85°C | -25°C | 3.6V | 8GX8 | 8 | 68719476736 bit | FLASH | PARALLEL | 4 | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24L64F-WE2 | ROHM Semiconductor | 0.0914 |
Min: 1 Mult: 1 |
0.00000000 | 11 Weeks | Tape & Reel (TR) | 2009 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | 8-SOIC (0.173, 4.40mm Width) | 4.4mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.78mm | 8542.32.00.51 | 1 | e2 | Tin/Copper (Sn/Cu) | DUAL | 260 | 2.5V | 10 | BR24L64 | 8 | YES | 1.27mm | R-PDSO-G8 | 1.8V | Not Qualified | 2/5V | 5.5V | 64Kb 8K x 8 | Non-Volatile | 0.003mA | 1.8V~5.5V | 8KX8 | 8 | 65536 bit | SERIAL | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MR4A08BYS35 | Everspin Technologies Inc. | 32.4152 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tray | 2015 | yes | Active | 3 (168 Hours) | 44 | EAR99 | 3.3V | 18.41mm | ROHS3 Compliant | 44 | 44-TSOP (0.400, 10.16mm Width) | 16 Mb | Surface Mount | 0°C~70°C TA | MRAM (Magnetoresistive RAM) | 100mA | ASYNCHRONOUS | 1.2mm | 8542.32.00.71 | 1 | 180mA | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 44 | 0.8mm | 3V | Not Qualified | 3.6V | 16Mb 2M x 8 | Non-Volatile | 3V~3.6V | 2MX8 | 8 | 8b | 0.014A | 35 ns | 8b | RAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MB85RS64TUPN-G-AMEWE1 | Fujitsu Electronics America, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | RoHS Compliant | 8-WFDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FRAM (Ferroelectric RAM) | 8-SON | 64Kb 8K x 8 | Non-Volatile | 1.8V~3.6V | 10MHz | FRAM | SPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S25FL512SDPBHI313 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | FL-S | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | 24 | IT ALSO HAVE MEMORY WIDTH X1 | 24-TBGA | SPI, Serial | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | BOTTOM | 3V | YES | 1mm | 2.7V | Not Qualified | 3/3.3V | 3.6V | 512Mb 64M x 8 | Non-Volatile | 0.075mA | 2.7V~3.6V | 64MX8 | 8 | 512753664 bit | 8b | 66MHz | 0.0001A | 1 | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 3V | SPI | FLASH | SPI - Quad I/O | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT45DB642D-TU | Microchip | 125.9553 |
Min: 1 Mult: 1 |
0.00000000 | download | 1997 | Lead Free | 28 | 66MHz | 8MB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TH58NVG4S0HTA20 | Toshiba America Electronic Components | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | icon-pbfree yes | unknown | FLASH | 3.3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MSR830AGC-1512 | MoSys, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tray | Active | 4 (72 Hours) | ROHS3 Compliant | 676-BGA | Surface Mount | 0°C~85°C TC | 1T-SRAM | 2.7ns | 1.152Gb 16M x 72 | Volatile | 1V | 1.25GHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71T75802S150BGGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | 2012 | yes | Active | 3 (168 Hours) | 119 | 85°C | -40°C | 2.5V | 1 | 14mm | RoHS Compliant | Lead Free | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 18 Mb | 150MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 2.5V | 30 | 119 | INDUSTRIAL | YES | 2.375V | SRAMs | 2.625V | 3-STATE | RAM, SRAM | 20b | 0.235mA | 0.06A | 3.8 ns | COMMON | 2.38V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V25761SA183BQI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 85°C | -40°C | Non-RoHS Compliant | 165 | Parallel | 183MHz | RAM, SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CY7C1021BV33-15ZC | CYPRESS SEMICONDUCTOR CORP | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | [object Object] | 3 (168 Hours) | 3A991.B.2.B | 18.41mm | Non-RoHS Compliant | not_compliant | 10.16mm | CMOS | ASYNCHRONOUS | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 240 | 3.3V | 30 | 44 | COMMERCIAL | YES | 0.8mm | R-PDSO-G44 | 2.97V | 70°C | SRAMs | Not Qualified | 3.3V | 3.63V | 44 | 3-STATE | 0.19mA | 64KX16 | 16 | 1048576 bit | STANDARD SRAM | 1.2mm | PARALLEL | 0.005A | 15 ns | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MX25L1006EMI-10G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tube | 2009 | MX25xxx05/06 | Not For New Designs | 3 (168 Hours) | 8 | 3.6V | 4.9mm | ROHS3 Compliant | Lead Free | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 1 Mb | 3.9mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 1.75mm | 1 | e3 | MATTE TIN (800) | DUAL | 260 | 3.3V | 40 | YES | 1.27mm | R-PDSO-G8 | 2.7V | Not Qualified | 3/3.3V | 1Mb 128K x 8 | Non-Volatile | 0.02mA | 2.7V~3.6V | 512KX2 | 2 | 104MHz | 0.00001A | 1 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | SPI | FLASH | SPI | 50μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TH58NYG3S0HBAI4 | Kioxia America, Inc. | 6.9658 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 3 (168 Hours) | 63 | 11mm | RoHS Compliant | 63-VFBGA | 9mm | Surface Mount | -40°C~85°C TA | FLASH - NAND (SLC) | ASYNCHRONOUS | 1mm | 1 | BOTTOM | 1.8V | YES | 0.8mm | R-PBGA-B63 | 1.7V | 1.95V | 8Gb 1G x 8 | Non-Volatile | 1.7V~1.95V | 1GX8 | 8 | 8589934592 bit | 3V | FLASH | Parallel | 25ns |
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MT46V64M4FG-75:G Micron Technology Inc.
Surface Mount 60 Pin Memory IC MT46V64M4 256 Mb kb 14mm mm 150mA mA
Price: 0.0000
RFQ -
7024S35PF Integrated Device Technology (IDT)
5V V 100 Pin Memory IC 64 kb kb 14mm mm
Price: 0.0000
RFQ -
IDT7164L20Y Integrated Device Technology (IDT)
5V V Surface Mount 28 Pin Memory IC 64 kb kb 90mA mA 8b b
Price: 0.0000
RFQ -
FM25V02A-GTR Cypress Semiconductor Corp
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MR4A08BYS35 Everspin Technologies Inc.
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MX25L1006EMI-10G Macronix
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