Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Weight | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Total Dose | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDT71V2546S100PFI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2008 | 3 (168 Hours) | 100 | 3A991.B.2.A | 85°C | -40°C | 20mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | LQFP | Parallel | not_compliant | 100MHz | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | OTHER | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 2.53.3V | 3.465V | 3-STATE | RAM, SRAM | 0.26mA | 128KX36 | 36 | 4718592 bit | 0.045A | 5 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S34SL01G200BHI000 | SkyHigh Memory Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CAT28C256L12 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2007 | Obsolete | 1 (Unlimited) | 28 | EAR99 | 5V | 36.695mm | RoHS Compliant | Lead Free | 28 | 28-DIP (0.600, 15.24mm) | 256 kb | 15.24mm | Through Hole | 0°C~70°C TA | CMOS | ASYNCHRONOUS | 5.08mm | 8542.32.00.51 | 1 | 30mA | e3 | Tin (Sn) | DUAL | 260 | 5V | 40 | CAT28C256 | 28 | 2.54mm | Not Qualified | 5V | 120ns | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | 32KX8 | 8 | 0.00015A | 100000 Write/Erase Cycles | 5ms | 5V | YES | YES | NO | 64words | EEPROM | Parallel | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MX25U2033EZNI-12G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tray | MXSMIO™ | Active | 3 (168 Hours) | 8 | 6mm | ROHS3 Compliant | CAN BE ORGANISED AS 2 MBIT X 1 | 8-WDFN Exposed Pad | SPI, Serial | 5mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 0.8mm | 1 | e3 | MATTE TIN (800) | DUAL | 260 | 1.8V | 40 | 8 | YES | 1.27mm | R-PDSO-N8 | 1.65V | Not Qualified | 1.8V | 2V | 2Mb 256K x 8 | Non-Volatile | 0.025mA | 1.65V~2V | 512MX4 | 4 | 2147483648 bit | 80MHz | 0.000008A | 2 | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 1.8V | SPI | FLASH | SPI | 30μs, 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F8G08ABACAH4-IT:C | Micron Technology Inc. | 8.1332 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Surface Mount | Tray | 2012 | Active | 3 (168 Hours) | 63 | 3.3V | ROHS3 Compliant | Copper, Silver, Tin | 63 | 63-VFBGA | 8 Gb | Surface Mount | -40°C~85°C TA | FLASH - NAND | 35mA | BOTTOM | MT29F8G08 | 0.8mm | Not Qualified | 8Gb 1G x 8 | Non-Volatile | 31b | 2.7V~3.6V | 1GX8 | 8 | Asynchronous | 0.0001A | 25 ns | 8b | NO | NO | YES | 4K | 4kB | YES | FLASH | Parallel | 256K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61LF12836EC-6.5TQLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | 100 | 3A991.B.2.A | 3.3V | 4 | 20mm | ROHS3 Compliant | 100 | 100-LQFP | 4 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | 190mA | e3 | Matte Tin (Sn) | QUAD | 260 | 3.3V | 10 | 100 | YES | 0.65mm | 3.135V | Not Qualified | 3-STATE | 6.5ns | 4.5Mb 128K x 36 | Volatile | 17b | 3.135V~3.465V | 128KX36 | 36 | Synchronous | 133MHz | 0.085A | 36b | COMMON | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7134SA55P | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 48-DIP (0.600, 15.24mm) | Through Hole | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7134 | 32Kb 4K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V424L15Y8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 36-BSOJ (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V424 | 36-SOJ | 15ns | 4Mb 512K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DS2704RQC+T10 | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 8-WFDFN Exposed Pad | Surface Mount | -30°C~85°C TA | EEPROM | 8-TDFN-EP (2x3) | 1.25Kb 32Bytes x 5 pages | Non-Volatile | 2.5V~5.5V | EEPROM | 1-Wire® | 1μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT46V64M16TG-75:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2007 | no | Obsolete | 5 (48 Hours) | 66 | EAR99 | 2.5V | 1 | 22.22mm | Non-RoHS Compliant | Contains Lead | No | 66 | AUTO/SELF REFRESH | 66-TSSOP (0.400, 10.16mm Width) | 1 Gb | Surface Mount | 0°C~70°C TA | SDRAM - DDR | 1.2mm | 8542.32.00.32 | 1 | 250mA | e0 | TIN LEAD | DUAL | 235 | 2.5V | 30 | MT46V64M16 | 66 | 0.65mm | 2.3V | 2.7V | 3-STATE | 750ps | 1Gb 64M x 16 | Volatile | 16b | 2.3V~2.7V | 64MX16 | 16 | 16b | 133MHz | 0.01A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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11LC161T-E/MS | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 3mm | ROHS3 Compliant | Tin | 8 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Serial | 16 kb | 3mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.1mm | 1 | 5mA | e3 | DUAL | 260 | 5V | 40 | 11LC161 | 8 | 0.65mm | 2.5V | Not Qualified | 3/5V | 5.5V | 16Kb 2K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 100kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 10ms | 1-WIRE | EEPROM | Single Wire | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71T75902S85BGGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2005 | 85°C | -40°C | RoHS Compliant | BGA | Parallel | RAM, SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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5962F1120201VXA | Cypress Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Through Hole | 165 | 9A515.E | 125°C | -55°C | 1.8V | 2 | Non-RoHS Compliant | 165 | 1.9V | 1.7V | 72 Mb | 250MHz | CMOS | 5.38mm | 1 | BOTTOM | UNSPECIFIED | NOT SPECIFIED | 1.8V | NOT SPECIFIED | MILITARY | Qualified | MIL-PRF-38535 Class V | 40b | 36 | QDR SRAM | Synchronous | 300k Rad(Si) V | PARALLEL | 0.85 ns | 36b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT46V64M8P-6T:F | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | Obsolete | 4 (72 Hours) | 66 | EAR99 | 2.5V | 1 | 22.22mm | ROHS3 Compliant | Lead Free | No | 66 | AUTO/SELF REFRESH | 66-TSSOP (0.400, 10.16mm Width) | 512 Mb | Surface Mount | 0°C~70°C TA | SDRAM - DDR | 1.2mm | 8542.32.00.28 | 1 | 175mA | e3 | Matte Tin (Sn) | DUAL | 260 | 2.5V | 30 | MT46V64M8 | 66 | 0.65mm | 2.3V | 2.7V | 3-STATE | 700ps | 512Mb 64M x 8 | Volatile | 15b | 2.3V~2.7V | 64MX8 | 8 | 8b | 167MHz | 0.005A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V24L15PFGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | yes | Active | 3 (168 Hours) | 100 | EAR99 | 85°C | -40°C | 3.3V | 2 | 14mm | RoHS Compliant | Lead Free | No | 100 | TQFP | Parallel | 3.6V | 3V | 64 kb | 1.4mm | 14mm | 1.4mm | 657.000198mg | CMOS | 185mA | 1 | e3 | Matte Tin (Sn) | QUAD | GULL WING | 260 | 3.3V | 100 | INDUSTRIAL | 15 ns | 8kB | RAM, SDR, SRAM | 24b | 4KX16 | Asynchronous | 16b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RD48F3000P0ZTQ0A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2009 | StrataFlash™ | Obsolete | 3 (168 Hours) | 88 | Non-RoHS Compliant | 88-TFBGA, CSPBGA | unknown | Surface Mount | -40°C~85°C TC | FLASH - NOR | BOTTOM | 48F3000P0 | YES | 0.8mm | R-PBGA-B88 | Not Qualified | 1.81.8/3.3V | 128Mb 8M x 16 | Non-Volatile | 0.028mA | 1.7V~2V | 8MX16 | 16 | 134217728 bit | 52MHz | 0.000075A | 85 ns | NO | NO | YES | 4127 | 4words | YES | FLASH | Parallel | 85ns | 16K64K | TOP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V25L20PFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | yes | Active | 3 (168 Hours) | 100 | EAR99 | 85°C | -40°C | 3.3V | 2 | 14mm | RoHS Compliant | Lead Free | No | 100 | TQFP | Parallel | 3.6V | 3V | 128 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 195mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | INDUSTRIAL | 0.5mm | SRAMs | 3-STATE | 20 ns | 16kB | RAM, SDR, SRAM | 26b | 8KX16 | Asynchronous | 0.005A | 16b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS46TR16256AL-125KBLA1 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tray | Active | 3 (168 Hours) | 96 | 1 | 13mm | ROHS3 Compliant | 96 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 96-TFBGA | Surface Mount | -40°C~95°C TC | SDRAM - DDR3 | SYNCHRONOUS | 261mA | 1.2mm | 1 | BOTTOM | 1.35V | YES | 0.8mm | 1.283V | Not Qualified | 1.35V | 1.45V | 3-STATE | 20ns | AEC-Q100 | 4Gb 256M x 16 | Volatile | 1.283V~1.45V | 256MX16 | 16 | 16b | 800MHz | 0.016A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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W29N02GVBIAF | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tray | 2016 | Active | 3 (168 Hours) | 63 | 11mm | ROHS3 Compliant | 63 | 63-VFBGA | 9mm | Surface Mount | -40°C~85°C TA | FLASH - NAND (SLC) | ASYNCHRONOUS | 1mm | 1 | BOTTOM | 3V | YES | 0.8mm | 2.7V | 3.6V | 2Gb 256M x 8 | Non-Volatile | 2.7V~3.6V | 256MX8 | 8 | 2147483648 bit | 3.3V | FLASH | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MX29F400CBTI-90G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | yes | 3 (168 Hours) | 48 | EAR99 | 85°C | -40°C | 18.4mm | RoHS Compliant | BOTTOM BOOT BLOCK | TFSOP | Parallel | 12mm | CMOS | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 5V | 40 | 48 | INDUSTRIAL | YES | 0.5mm | R-PDSO-G48 | 4.5V | Flash Memories | Not Qualified | 5V | 5.5V | FLASH, NOR | 0.05mA | 256KX16 | 16 | 4194304 bit | 0.000005A | 90 ns | 8 | 100000 Write/Erase Cycles | 90ms | 5V | YES | YES | 1217 | YES | 16K8K32K64K | BOTTOM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V09L15PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 3.6V | 3V | 1 Mb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 235mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 15 ns | 128kB | RAM, SDR, SRAM | 34b | Asynchronous | 0.003A | 8b | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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25LC256-H/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2016 | yes | Active | 3 (168 Hours) | 8 | 3A001.A.2.A | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 256 kb | 1.5mm | 3.9mm | Surface Mount | -40°C~150°C TA | CMOS | 1 | 5mA | e3 | Matte Tin (Sn) | DUAL | 260 | 2.7V | 40 | 25LC256 | 8 | 1.27mm | 2.5V | 2/5V | 5.5V | 100 ns | 256Kb 32K x 8 | Non-Volatile | 2.5V~5.5V | 5MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 6ms | SPI | EEPROM | SPI | 6ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MX30UF1G18AC-TI | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 3 (168 Hours) | 48 | 18.4mm | Non-RoHS Compliant | 12mm | CMOS | ASYNCHRONOUS | 1.2mm | 1 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1.8V | 40 | INDUSTRIAL | YES | 0.5mm | R-PDSO-G48 | 1.7V | 85°C | -40°C | 1.95V | 128MX8 | 8 | 1073741824 bit | FLASH | PARALLEL | 1.8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY15V104QSN-108SXI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tube | Excelon™-Ultra, F-RAM™ | Active | 3 (168 Hours) | 8 | 5.23mm | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | 5.23mm | Surface Mount | -40°C~85°C TA | FRAM (Ferroelectric RAM) | SYNCHRONOUS | 2.03mm | 1 | DUAL | 1.8V | YES | 1.27mm | S-PDSO-G8 | 1.71V | 1.89V | 4Mb 512K x 8 | Non-Volatile | 1.71V~1.89V | 512KX8 | 8 | 4194304 bit | 108MHz | FRAM | SPI - Quad I/O | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BQ4013YMA-120 | Texas Instruments | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | no | Obsolete | 1 (Unlimited) | 32 | EAR99 | 5V | 42.8mm | ROHS3 Compliant | Contains Lead | No | 32 | 32-DIP Module (0.61, 15.49mm) | No SVHC | 1 Mb | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 50mA | 9.53mm | 1 | 50mA | DUAL | 5V | BQ4013 | 2.54mm | SRAMs | 5V | 1Mb 128K x 8 | Non-Volatile | 4.5V~5.5V | 128KX8 | 8 | 8b | 0.004A | 120 ns | 8b | NVSRAM | Parallel | 120ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS4C32M16SC-7TINTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 54 | 1 | 22.22mm | ROHS3 Compliant | AUTO/SELF REFRESH | 54-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | DUAL | 3.3V | YES | 0.8mm | R-PDSO-G54 | 3V | 3.6V | 17ns | 512Mb 32M x 16 | Volatile | 3V~3.6V | 32MX16 | 16 | 536870912 bit | 133MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70914S20J8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 68-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70914 | 20ns | 36Kb 4K x 9 | Volatile | 4.5V~5.5V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F256G08AKCBBK7-6:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 0°C~70°C TA | FLASH - NAND | 256Gb 32G x 8 | Non-Volatile | 2.7V~3.6V | 167MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT45DB041A-JC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | 2001 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 32-LCC (J-Lead) | Surface Mount | 0°C~70°C TC | FLASH | AT45DB041 | 32-PLCC (13.97x11.43) | 4Mb 264Bytes x 2048 pages | Non-Volatile | 2.7V~3.6V | 13MHz | FLASH | SPI | 14ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CAT28C256H1315 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | 28 | 11.8mm | ROHS3 Compliant | 28-TSSOP (0.465, 11.80mm Width) | 8mm | Surface Mount | 0°C~70°C TA | CMOS | ASYNCHRONOUS | 1.2mm | 1 | e3 | TIN | DUAL | 260 | 5V | NOT SPECIFIED | 28 | YES | 0.55mm | R-PDSO-G28 | 4.5V | COMMERCIAL | 5.5V | 150ns | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | 32KX8 | 8 | 262144 bit | 5ms | 5V | EEPROM | Parallel | 5ms |
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