Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Number of Sectors/Size | Page Size | Serial Bus Type | I2C Control Byte | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
.png "70V9199L12PFI") |
70V9199L12PFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Synchronous | 12ns | 1.125Mb 128K x 9 | Volatile | 3V~3.6V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY14B104N-BA45XC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2007 | Obsolete | 3 (168 Hours) | 48 | 3A991.B.2.A | 3.3V | 10mm | ROHS3 Compliant | Lead Free | 48 | 48-TFBGA | unknown | 4 Mb | Surface Mount | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | 50mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3V | 20 | CY14B104 | 48 | 0.75mm | 2.7V | SRAMs | Not Qualified | 3.6V | 4Mb 256K x 16 | Non-Volatile | 2.7V~3.6V | 256KX16 | 16 | 16b | 0.005A | 45 ns | 16b | NVSRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53B256M32D1NP-062 WT ES:C | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 1 (Unlimited) | 200-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 8Gb 256M x 32 | Volatile | 1.1V | 1600MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V424L12YI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 3 (168 Hours) | 36 | 3A991.B.2.A | 85°C | -40°C | 23.495mm | Non-RoHS Compliant | 36 | Parallel | not_compliant | 10.16mm | CMOS | 3.683mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 3.3V | 30 | 36 | INDUSTRIAL | YES | 1.27mm | 3V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.155mA | 512KX8 | 8 | 4194304 bit | 0.01A | 12 ns | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT27LV512A-15JC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1998 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 32-LCC (J-Lead) | Surface Mount | 0°C~70°C TC | EPROM - OTP | AT27LV512 | 32-PLCC (13.97x11.43) | 150ns | 512Kb 64K x 8 | Non-Volatile | 3V~3.6V 4.5V~5.5V | EPROM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24C01A-10SI-2.7-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | EEPROM | AT24C01 | 8-SOIC | 900ns | 1Kb 128 x 8 | Non-Volatile | 2.7V~5.5V | 400kHz | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1370S-200BZI | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 165-LBGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 165-FBGA (13x15) | 3.4ns | 18Mb 512K x 36 | Volatile | 3.135V~3.6V | 167MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V06S25PF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT70V06 | 64-TQFP (14x14) | 25ns | 128Kb 16K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SST26WF080BAT-104I/NP | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tape & Reel (TR) | 2014 | SST26 SQI® | Active | 1 (Unlimited) | 8 | 3mm | ROHS3 Compliant | 8-UFDFN Exposed Pad | SPI | 2mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 0.6mm | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 1.8V | 30 | SST26WF080 | YES | 0.5mm | R-PDSO-N8 | 1.65V | 1.95V | TS 16949 | 8Mb 1M x 8 | Non-Volatile | 1.65V~1.95V | 80MX1 | 1 | 83886080 bit | SERIAL | 104MHz | 1.8V | FLASH | SPI - Quad I/O | 1.5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TE28F256P30B95A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2009 | StrataFlash™ | Obsolete | 2 (1 Year) | 56 | 1.8V | Non-RoHS Compliant | No | 56 | 56-TFSOP (0.724, 18.40mm Width) | Parallel, Serial | 256 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | DUAL | 28F256P30 | YES | 0.5mm | 1.81.8/3.3V | 256Mb 16M x 16 | Non-Volatile | 24b | 0.051mA | 1.7V~2V | 16MX16 | 16 | 40MHz | 0.000115A | 95 ns | NO | NO | 4255 | 4words | FLASH | Parallel | 95ns | 16K64K | BOTTOM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V65803S133PFGI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V65803 | 100-TQFP (14x14) | 4.2ns | 9Mb 512K x 18 | Volatile | 3.135V~3.465V | 133MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V65603S133BQG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V65603 | 4.2ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 133MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S26KL512SDABHN030 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tray | 2005 | HyperFlash™ KL | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | 24-VBGA | 6mm | Surface Mount | -40°C~125°C TA | FLASH - NOR | SYNCHRONOUS | 1mm | 8542.32.00.51 | 1 | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1mm | R-PBGA-B24 | 2.7V | 3.6V | 96ns | 512Mb 64M x 8 | Non-Volatile | 2.7V~3.6V | 64MX8 | 8 | 536870912 bit | 100MHz | 3V | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7164S85TDB | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Tube | Active | 1 (Unlimited) | Non-RoHS Compliant | 28-CDIP (0.300, 7.62mm) | Through Hole | -55°C~125°C TA | SRAM - Asynchronous | 64Kb 8K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 85ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CY7C132-35PC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 48-DIP (0.600, 15.24mm) | Through Hole | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | 48-DIP | 35ns | 16Kb 2K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7024S55PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2000 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | TQFP | Parallel | 5.5V | 4.5V | 64 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 250mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 55 ns | 8kB | RAM, SDR, SRAM | 24b | 4KX16 | Asynchronous | 0.015A | 16b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||
 |
MT25QU256ABA8ESF-0AAT | Micron Technology Inc. | 5.7642 |
Min: 1 Mult: 1 |
0.00000000 | download | 111 Weeks | Bulk | Automotive, AEC-Q100 | Obsolete | 16 | 10.3mm | Non-RoHS Compliant | 16-SOIC (0.295, 7.50mm Width) | 7.5mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 2.65mm | 1 | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G16 | 1.7V | 2V | 256Mb 32M x 8 | Non-Volatile | 1.7V~2V | 256MX1 | 1 | 268435456 bit | SERIAL | 133MHz | 1.8V | FLASH | SPI | 8ms, 2.8ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V65703S80PFI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 3 (168 Hours) | 100 | 3A991.B.2.A | 85°C | -40°C | 20mm | Non-RoHS Compliant | FLOW-THROUGH ARCHITECTURE | LQFP | Parallel | not_compliant | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | INDUSTRIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.06mA | 256KX36 | 36 | 9437184 bit | 95MHz | 0.06A | 8 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M24C01-RDS6G | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | 3mm | ROHS3 Compliant | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | 2-Wire, I2C, Serial | 1 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | 1.1mm | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 5V | 10 | M24C01 | 8 | YES | 0.65mm | 2/5V | 5.5V | 900ns | 1Kb 128 x 8 | Non-Volatile | 1.8V~5.5V | 8 | 400kHz | 0.000001A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53B384M64D4NK-053 WT ES:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 1 (Unlimited) | 366-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 24Gb 384M x 64 | Volatile | 1.1V | 1866MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V9269L12PRFI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 128 | EAR99 | 85°C | -40°C | 3.3V | 2 | 20mm | RoHS Compliant | Contains Lead | No | 128 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 3.6V | 3V | 256 kb | 33.3MHz | 14mm | 1.4mm | CMOS | 1.6mm | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 225 | 3.3V | 128 | INDUSTRIAL | 0.5mm | 12 ns | 32kB | RAM, SDR, SRAM | 14b | 16KX16 | Synchronous | 16b | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
PC28F128P30BF65A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2010 | StrataFlash™ | yes | Obsolete | 3 (168 Hours) | 64 | 3A991.B.1.A | 1.8V | 13mm | ROHS3 Compliant | No | 64 | 64-TBGA | Parallel, Serial | 128 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 8542.32.00.51 | 1 | 28mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 30 | 28F128P30 | 64 | YES | 1mm | 1.81.8/3.3V | 1.7V | 128Mb 8M x 16 | Non-Volatile | 23b | 1.7V~2V | 8MX16 | 16 | Asynchronous | 52MHz | 0.000055A | 65 ns | 16b | NO | NO | 4127 | 8words | FLASH | Parallel | 65ns | BOTTOM | ||||||||||||||||||||||||||||||||||||||||||||
 |
70T659S15BC8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 256 | 70°C | 0°C | 2.5V | 2 | 17mm | RoHS Compliant | Contains Lead | No | 256 | Parallel | 2.6V | 2.4V | 4.5 Mb | 17mm | 1.4mm | CMOS | 1.5mm | 1 | 305mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 20 | 256 | COMMERCIAL | 1mm | SRAMs | 3-STATE | 15 ns | RAM, SRAM | 34b | Asynchronous | 0.01A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
R1LV1616RBG-7SI#B0 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-TFBGA | Surface Mount | -40°C~85°C TA | SRAM | 48-FBGA (7.5x8.5) | 70ns | 16Mb 1M x 16 | Volatile | 2.7V~3.6V | SRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STK14CA8-RF25 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1996 | Obsolete | 3 (168 Hours) | 48 | EAR99 | 15.875mm | ROHS3 Compliant | 48-BSSOP (0.295, 7.50mm Width) | unknown | 7.505mm | Surface Mount | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 2.79mm | 8542.32.00.41 | 1 | e3 | Matte Tin (Sn) | DUAL | 260 | 3V | 20 | STK14CA8 | 48 | YES | 0.635mm | R-PDSO-G48 | 2.7V | SRAMs | Not Qualified | 3V | 3.6V | 1Mb 128K x 8 | Non-Volatile | 0.065mA | 2.7V~3.6V | 128KX8 | 8 | 1048576 bit | 0.003A | 25 ns | NVSRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY62147G30-45BVXA | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Tray | 2012 | MoBL® | Active | 3 (168 Hours) | 48 | 3A991.B.2.A | 8mm | ROHS3 Compliant | 48 | 48-VFBGA | 6mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1mm | 8542.32.00.41 | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | BOTTOM | 260 | 3V | NOT SPECIFIED | YES | 0.75mm | 2.2V | 3.6V | 4Mb 256K x 16 | Volatile | 2.2V~3.6V | 256KX16 | 16 | 4194304 bit | 45 ns | SRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
709089S12PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2010 | no | Active | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 5.5V | 4.5V | 512 kb | 33.3MHz | 1.4mm | 14mm | 1.4mm | 657.000198mg | 345mA | 345mA | 100 | 12 ns | 64kB | RAM, SDR, SRAM | 32b | Synchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70125S55J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | PLCC | Parallel | 5.5V | 4.5V | 18 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 240mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 55 ns | RAM, SRAM | 22b | Asynchronous | 0.015A | 9b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
709269S12PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2009 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 5.5V | 4.5V | 256 kb | 33.3MHz | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 345mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 12 ns | 32kB | RAM, SDR, SRAM | 28b | 16KX16 | Synchronous | 0.015A | 16b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||
|
MT29F3T08EUCBBM4-37:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 0°C~70°C TA | FLASH - NAND | 3Tb 384G x 8 | Non-Volatile | 2.7V~3.6V | 267MHz | FLASH | Parallel |
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CY14B104N-BA45XC Cypress Semiconductor Corp
Surface Mount 48 Pin Memory IC CY14B104 4 Mb kb 10mm mm 50mA mA 16b b
Price: 0.0000
RFQ -
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IDT71V424L12YI8 Integrated Device Technology (IDT)
3.3V V 36 Pin Memory IC 23.495mm mm
Price: 0.0000
RFQ -
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SST26WF080BAT-104I/NP Microchip Technology
SST26 SQI® Memory IC SST26 SQI® Series SST26WF080 3mm mm
Price: 0.0000
RFQ -
TE28F256P30B95A Micron Technology Inc.
1.81.8/3.3V V StrataFlash™ Memory IC StrataFlash™ Series 28F256P30 256 Mb kb
Price: 0.0000
RFQ -
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S26KL512SDABHN030 Cypress Semiconductor Corp
HyperFlash™ KL Memory IC HyperFlash™ KL Series 8mm mm
Price: 0.0000
RFQ -
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7024S55PF Integrated Device Technology (IDT)
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Price: 0.0000
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70V9269L12PRFI Integrated Device Technology (IDT)
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