Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IS43TR85120AL-15HBL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | 78 | EAR99 | 1.35V | 1 | 10.5mm | RoHS Compliant | 78 | AUTO/SELF REFRESH | 78-TFBGA | 4 Gb | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1.2mm | 8542.32.00.36 | 1 | BOTTOM | 1.35V | 78 | YES | 0.8mm | 1.283V | 1.45V | 20ns | 4Gb 512M x 8 | Volatile | 16b | 1.283V~1.45V | 512MX8 | 8 | 667MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "70V07L25J") |
70V07L25J | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 68-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT70V07 | 256Kb 32K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29F1T08EELCEJ4-R:C | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 3 Weeks | Bulk | Active | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7007S15PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2010 | no | Active | 3 (168 Hours) | 80 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 80 | SEMAPHORE; AUTOMATIC POWER DOWN | TQFP | Parallel | 5.5V | 4.5V | 256 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 325mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 80 | COMMERCIAL | 0.65mm | SRAMs | 5V | 3-STATE | 15 ns | 32kB | RAM, SDR, SRAM | 30b | Asynchronous | 0.015A | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||
 |
MT29F2G16ABAFAWP:F | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Surface Mount | Tube | Active | 3 (168 Hours) | 3.3V | ROHS3 Compliant | Tin | 48 | TSOP | 2 Gb | 0°C~70°C TA | FLASH - NAND | 30mA | 30 ns | 2Gb 128M x 16 | Non-Volatile | 28b | 2.7V~3.6V | Asynchronous | 16b | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7005L20PFI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT7005 | 64-TQFP (14x14) | 20ns | 64Kb 8K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL032N90FFIS43 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 18 Weeks | Tape & Reel (TR) | 2015 | GL-N | Active | 3 (168 Hours) | 85°C | -40°C | ROHS3 Compliant | 64 | 64-LBGA | Parallel | Surface Mount | -40°C~85°C TA | FLASH - NOR | 64-FBGA (13x11) | 90ns | 32Mb 4M x 8 2M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 90ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V65803S100BG | Renesas Electronics America Inc. | 28.0144 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Active | 3 (168 Hours) | Non-RoHS Compliant | 119-BGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V65803 | 119-PBGA (14x22) | 5ns | 9Mb 512K x 18 | Volatile | 3.135V~3.465V | 100MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7142LA100J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2007 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | AUTOMATIC POWER-DOWN | PLCC | Parallel | 5.5V | 4.5V | 16 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 110mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 100 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||
 |
7027S15PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 5.5V | 4.5V | 512 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 365mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 15 ns | 64kB | RAM, SDR, SRAM | 30b | Asynchronous | 0.015A | 16b | COMMON | |||||||||||||||||||||||||||||||||||||||||||
 |
MT47H128M16RT-25E AAT:C | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tray | 2014 | yes | Active | 3 (168 Hours) | 84 | EAR99 | 1 | 12.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 84-TFBGA | 9mm | Surface Mount | -40°C~105°C TC | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 8542.32.00.36 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 30 | MT47H128M16 | 84 | YES | 0.8mm | R-PBGA-B84 | 1.7V | Not Qualified | 1.8V | 1.9V | 3-STATE | 400ps | AEC-Q100 | 2Gb 128M x 16 | Volatile | 0.33mA | 1.7V~1.9V | 128MX16 | 16 | 2147483648 bit | 400MHz | 0.012A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | ||||||||||||||||||||||||||||||||||||
 |
CY7C024E-25AXCT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | yes | Obsolete | 3 (168 Hours) | 100 | EAR99 | 5V | 2 | 14mm | ROHS3 Compliant | Lead Free | No | 100 | 100-LQFP | 64 kb | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | 1.6mm | 1 | 250mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | QUAD | 260 | 5V | 20 | CY7C024 | 0.5mm | 5V | 3-STATE | 64Kb 4K x 16 | Volatile | 24b | 4.5V~5.5V | 4KX16 | 16 | Asynchronous | 0.0015A | 16b | COMMON | 2V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||
|
7132SA55CB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Bulk | 2007 | Active | 125°C | -55°C | 5V | 2 | 61.72mm | RoHS Compliant | Contains Lead | No | 48 | DIP | Parallel | 5.5V | 4.5V | 16 kb | 15.24mm | 3.3mm | 190mA | 55 ns | RAM, SRAM | 22b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V65903S80PFI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 3 (168 Hours) | 100 | 3A991.B.2.A | 85°C | -40°C | 20mm | Non-RoHS Compliant | FLOW-THROUGH ARCHITECTURE | LQFP | Parallel | not_compliant | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | INDUSTRIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.06mA | 512KX18 | 18 | 9437184 bit | 95MHz | 0.06A | 8 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V67602S133BQ8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V67602 | 165-CABGA (13x15) | 4.2ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 133MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1061GE-10ZXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | 2012 | yes | Active | 3 (168 Hours) | 48 | 3A991.B.2.A | 18.4mm | ROHS3 Compliant | 54-TSOP (0.400, 10.16mm Width) | 12mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.2mm | 8542.32.00.41 | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | YES | 0.5mm | R-PDSO-G48 | 4.5V | 5.5V | 16Mb 1M x 16 | Volatile | 4.5V~5.5V | 1MX16 | 16 | 16777216 bit | 10 ns | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC08BT-E/MC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 8 | 3mm | ROHS3 Compliant | Tin | No | 8 | 8-VFDFN Exposed Pad | I2C, Serial | 8 kb | 2mm | Surface Mount | -40°C~125°C TA | CMOS | 1mm | 1 | 3mA | e3 | DUAL | 260 | 5V | 40 | 24LC08B | 8 | 0.5mm | 2.5V | 3/5V | 5.5V | 900ns | 8Kb 256 x 8 x 4 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010XMMR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||
 |
M24512-RDW6P | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5V | 4.4mm | ROHS3 Compliant | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | 2-Wire, I2C, Serial | 512 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | 1.2mm | 1 | 5mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 2.5V | M24512 | 8 | 0.65mm | 500ns | 512Kb 64K x 8 | Non-Volatile | 1.8V~5.5V | 8 | 1MHz | 0.000001A | 200 | 4000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||
 |
AT93C57-10PC-2.5 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | Not Applicable | Non-RoHS Compliant | 8-DIP (0.300, 7.62mm) | Through Hole | 0°C~70°C TA | EEPROM | AT93C57 | 8-PDIP | 2Kb 256 x 8 128 x 16 | Non-Volatile | 2.5V~5.5V | 2MHz | EEPROM | SPI | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3576YS150PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2015 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 20mm | Non-RoHS Compliant | LQFP | Parallel | not_compliant | 150MHz | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.295mA | 128KX36 | 36 | 4718592 bit | 0.03A | 3.8 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||
 |
M29W800DB70N6T TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2004 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | M29W800 | 8Mb 1M x 8 512K x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29F8G08ABABAWP:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tape & Reel (TR) | 2013 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NAND | MT29F8G08 | 8Gb 1G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S16400F-5TL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 3.3V | RoHS Compliant | 54 | 54-TSOP (0.400, 10.16mm Width) | 64 Mb | Surface Mount | 0°C~70°C TA | SDRAM | 140mA | 5ns | 64Mb 4M x 16 | Volatile | 14b | 3V~3.6V | 16b | 200MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
EDB1332BDPC-1D-F-D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 111 Weeks | Bulk | Obsolete | 3 (168 Hours) | 85°C | -25°C | 1.2V | ROHS3 Compliant | 168 | 134-VFBGA | 1 Gb | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR2 | 533MHz | 134-VFBGA (10x11.5) | 1Gb 32M x 32 | Volatile | 13b | 1.14V~1.95V | 533MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7133LA55J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | no | Active | 1 (Unlimited) | 68 | EAR99 | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | PLCC | Parallel | 5.5V | 4.5V | 32 kb | 24mm | 3.63mm | CMOS | 1 | 250mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 68 | COMMERCIAL | SRAMs | 5V | 3-STATE | 55 ns | 4kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 16b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||
 |
70V3589S166BF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 208 | 70°C | 0°C | 3.3V | 2 | 15mm | RoHS Compliant | Contains Lead | No | 208 | Parallel | 3.45V | 3.15V | 2.3 Mb | 166MHz | 15mm | 1.4mm | CMOS | 1 | 500mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 3.3V | 208 | COMMERCIAL | 0.8mm | SRAMs | 3-STATE | 20 ns | 256kB | RAM, SDR, SRAM | 32b | 64KX36 | Synchronous | 0.03A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||
 |
71V321L25PFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | yes | Active | 3 (168 Hours) | 64 | EAR99 | 85°C | -40°C | 3.3V | 2 | 14mm | RoHS Compliant | Lead Free | No | 64 | TQFP | Parallel | 3.6V | 3V | 16 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 130mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 64 | INDUSTRIAL | 0.8mm | SRAMs | 3-STATE | 25 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.004A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3557SA85BQ | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 165 | 3A991.B.2.A | 70°C | 0°C | 15mm | Non-RoHS Compliant | 165 | FLOW-THROUGH ARCHITECTURE | Parallel | not_compliant | 13mm | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 165 | COMMERCIAL | YES | 1mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.225mA | 128KX36 | 36 | 4718592 bit | 90MHz | 0.04A | 8.5 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||
 |
70V38L15PFG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel | 2009 | yes | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Lead Free | No | 100 | LQFP | Parallel | 1.1 Mb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | COMMERCIAL | YES | 0.5mm | 3V | SRAMs | 3.6V | 3-STATE | RAM, SRAM | 32b | 64KX18 | 0.003A | 15 ns | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||
 |
7026L20J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | EAR99 | 70°C | 0°C | 5V | 2 | 29.21mm | RoHS Compliant | Contains Lead | No | 84 | PLCC | Parallel | 5.5V | 4.5V | 256 kb | 29.21mm | 3.63mm | 275mA | 84 | 20 ns | 32kB | RAM, SDR, SRAM | 28b | Asynchronous | 16b |
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IS43TR85120AL-15HBL ISSI, Integrated Silicon Solution Inc
78 Pin Memory IC 4 Gb kb 10.5mm mm
Price: 0.0000
RFQ -
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7007S15PF8 Integrated Device Technology (IDT)
5V V Surface Mount 80 Pin Memory IC 256 kb kb 14mm mm 325mA mA 8b b
Price: 0.0000
RFQ -
MT29F2G16ABAFAWP:F Micron Technology Inc.
Surface Mount Memory IC 2 Gb kb 30mA mA 16b b
Price: 0.0000
RFQ -
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7142LA100J Integrated Device Technology (IDT)
5V V Surface Mount 52 Pin Memory IC 16 kb kb 19mm mm 110mA mA 8b b
Price: 0.0000
RFQ -
7027S15PF Integrated Device Technology (IDT)
5V V Surface Mount 100 Pin Memory IC 512 kb kb 14mm mm 365mA mA 16b b
Price: 0.0000
RFQ -
MT47H128M16RT-25E AAT:C Micron Technology Inc.
1.8V V 84 Pin Memory IC MT47H128M16 12.5mm mm
Price: 0.0000
RFQ -
CY7C024E-25AXCT Cypress Semiconductor Corp
5V V Surface Mount Memory IC CY7C024 64 kb kb 14mm mm 250mA mA 16b b
Price: 0.0000
RFQ -
7132SA55CB Integrated Device Technology (IDT)
Through Hole Memory IC 16 kb kb 61.72mm mm 190mA mA 8b b
Price: 0.0000
RFQ -
IDT71V65903S80PFI8 Integrated Device Technology (IDT)
3.3V V 100 Pin Memory IC 20mm mm
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24LC08BT-E/MC Microchip Technology
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M24512-RDW6P STMicroelectronics
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IDT71V3576YS150PF Integrated Device Technology (IDT)
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RFQ -
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IS42S16400F-5TL-TR ISSI, Integrated Silicon Solution Inc
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7133LA55J Integrated Device Technology (IDT)
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70V38L15PFG8 Integrated Device Technology (IDT)
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