Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MT53B512M32D2DS-062 XT:C TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -30°C~105°C TC | SDRAM - Mobile LPDDR4 | 16Gb 512M x 32 | Volatile | 1.1V | 1600MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S25FS064SDSMFV010 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 11 Weeks | Tray | 2015 | FS-S | Obsolete | 3 (168 Hours) | 8 | 5.283mm | ROHS3 Compliant | IT ALSO HAVE MEMORY WIDTH X 1 | 8-SOIC (0.209, 5.30mm Width) | 5.283mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 2.159mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1.27mm | S-PDSO-G8 | 1.7V | 2V | 64Mb 8M x 8 | Non-Volatile | 1.7V~2V | 16MX4 | 4 | 67108864 bit | SERIAL | 80MHz | 2 | 1.8V | FLASH | SPI - Quad I/O | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "EMB8164B4PR-DV-F-D") |
EMB8164B4PR-DV-F-D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | 3 (168 Hours) | ROHS3 Compliant | FBGA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SM662GEE-BD | Silicon Motion, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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24AA1026-I/P | Microchip Technology | 3.3023 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tube | 2001 | Active | 1 (Unlimited) | ROHS3 Compliant | 8-DIP (0.300, 7.62mm) | Through Hole | -40°C~85°C TA | EEPROM | 24AA1026 | 8-PDIP | 900ns | 1Mb 128K x 8 | Non-Volatile | 1.7V~5.5V | 400kHz | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT47H128M8BT-5E L:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2006 | Discontinued | 3 (168 Hours) | 92 | EAR99 | 1 | 19mm | ROHS3 Compliant | AUTO/SELF REFRESH | 92-VFBGA | unknown | 11mm | Surface Mount | 0°C~85°C TC | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 8542.32.00.32 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 30 | MT47H128M8 | 92 | YES | 0.8mm | R-PBGA-B92 | 1.7V | Not Qualified | 1.8V | 1.9V | 3-STATE | 600ps | 1Gb 128M x 8 | Volatile | 0.26mA | 1.7V~1.9V | 128MX8 | 8 | 1073741824 bit | 200MHz | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3578S133PFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | IDT71V3578 | 4.2ns | 4.5Mb 256K x 18 | Volatile | 3.135V~3.465V | 133MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT40A2G16SKL-062E:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Active | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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EDFP112A3PB-JD-F-R | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | FBGA | -30°C~85°C TA | SDRAM - Mobile LPDDR3 | 24Gb 192M x 128 | Volatile | 1.14V~1.95V | 933MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7006S55PFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 128Kb 16K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29C8G96MAZBADJV-5 IT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | 2012 | Obsolete | 3 (168 Hours) | 168 | 12mm | ROHS3 Compliant | MOBILE LPDDR DEVICE ALSO AVAILABLE | 168-VFBGA | 12mm | Surface Mount | -40°C~85°C TA | FLASH - NAND, Mobile LPDRAM | SYNCHRONOUS | 1mm | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | MT29C8G96 | YES | 0.5mm | S-PBGA-B168 | 1.7V | 1.95V | 8Gb 512M x 16 N 4Gb 128M x 32 LPDRAM | Non-Volatile | 1.7V~1.95V | 512MX16 | 16 | 8589934592 bit | 200MHz | FLASH, RAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71T75602S200PFG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2010 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 20mm | RoHS Compliant | PIPELINED ARCHITECTURE | LQFP | Parallel | 200MHz | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 2.5V | 30 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 2.375V | SRAMs | Not Qualified | 2.5V | 2.625V | 3-STATE | RAM, SRAM | 0.275mA | 512KX36 | 36 | 18874368 bit | 0.04A | 3.2 ns | COMMON | 2.38V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7028L15PFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 1Mb 64K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49LV002T-70PC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 32-DIP (0.600, 15.24mm) | Through Hole | 0°C~70°C TC | FLASH | AT49LV002 | 32-PDIP | 70ns | 2Mb 256K x 8 | Non-Volatile | 3V~3.6V | FLASH | Parallel | 50μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT53B1DADS-DC TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | SDRAM - Mobile LPDDR4 | 200-WFBGA (10x14.5) | Volatile | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M25PX32-VMP6E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2013 | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | 3.3V | 6mm | ROHS3 Compliant | No | 8 | 8-VDFN Exposed Pad | SPI, Serial | 32 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1mm | 1 | 12mA | DUAL | 260 | 3V | 30 | M25PX32 | 8 | 1.27mm | 2.7V | 8 ns | 32Mb 4M x 8 | Non-Volatile | 1b | 2.7V~3.6V | 8 | Synchronous | 75MHz | 0.00001A | 8b | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 15ms | 256B | SPI | FLASH | SPI | 15ms, 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71321SA35J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | PLCC | Parallel | 5.5V | 4.5V | 16 kb | 19mm | 3.63mm | CMOS | 1 | 165mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 35 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.015A | 8b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TC58CVG0S3HRAIG | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Active | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
THGBMHG7C1LBAIL | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 48 Weeks | 2016 | Active | 85°C | -25°C | RoHS Compliant | MMC | 52MHz | FLASH, NAND | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS2430AP+T&R | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tape & Reel (TR) | 2002 | Active | 1 (Unlimited) | ROHS3 Compliant | 6-LSOJ (0.148, 3.76mm Width) | Surface Mount | -40°C~85°C TA | EEPROM | DS2430A | 6-TSOC | 15μs | 256b 32 x 8 | Non-Volatile | EEPROM | 1-Wire® | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F16G08AJADAWP:D | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Bulk | 2013 | Obsolete | 3 (168 Hours) | 48 | 3.3V | ROHS3 Compliant | 48 | 48-TFSOP (0.724, 18.40mm Width) | unknown | 16 Gb | Surface Mount | 0°C~70°C TA | FLASH - NAND | 35mA | DUAL | 3.3V | MT29F16G08 | 0.5mm | Not Qualified | 25 ns | 16Gb 2G x 8 | Non-Volatile | 31b | 2.7V~3.6V | 2GX8 | 8 | Asynchronous | 0.0001A | 8b | NO | NO | YES | 16K | 2Kwords | YES | FLASH | Parallel | 128K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TH58NVG3S0HTAI0 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 145 Weeks | 2013 | Active | 85°C | -40°C | RoHS Compliant | TFSOP | Parallel, Serial | EEPROM, NAND | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CG7751AA | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7016S12PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 80 | TQFP | Parallel | 5.5V | 4.5V | 144 kb | 14mm | 1.4mm | 325mA | 80 | 12 ns | 18kB | RAM, SDR, SRAM | 28b | Asynchronous | 9b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TH58BVG3S0HTA00 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | 2013 | Active | 48 | 70°C | 0°C | 18.4mm | RoHS Compliant | TFSOP | Parallel | 12mm | CMOS | ASYNCHRONOUS | 1.2mm | 1 | DUAL | GULL WING | 3.3V | 48 | COMMERCIAL | YES | 0.5mm | R-PDSO-G48 | 2.7V | 3.6V | EEPROM, NAND | 1GX8 | 8 | 8589934592 bit | 3.3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V416S10PHGI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | IDT71V416 | 44-TSOP II | 10ns | 4Mb 256K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TC58BVG0S3HBAI4 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 131 Weeks | Surface Mount | 2012 | Active | 63 | 85°C | -40°C | 11mm | RoHS Compliant | 63 | TFBGA | Parallel | 3.6V | 2.7V | 9mm | CMOS | ASYNCHRONOUS | 1 | BOTTOM | BALL | 3.3V | INDUSTRIAL | 0.8mm | 120 μs | 128MB | EEPROM, NAND | 128MX8 | 1073741824 bit | 8b | 3.3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53B256M32D1GZ-062 WT ES:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 8Gb 256M x 32 | Volatile | 1.1V | 1600MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PCF85102C-2P/03,11 | NXP USA Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2000 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 9.5mm | ROHS3 Compliant | 8-DIP (0.300, 7.62mm) | 7.62mm | Through Hole | -40°C~85°C TA | CMOS | SYNCHRONOUS | 4.2mm | 8542.32.00.51 | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | PCF85102C-2 | 8 | NO | 2.54mm | R-PDIP-T8 | 2.5V | Not Qualified | 3/5V | 6V | 2Kb 256 x 8 | Non-Volatile | 0.002mA | 2.5V~6.0V | 256X8 | 8 | 2048 bit | SERIAL | 100kHz | 0.0000035A | 10 | 1000000 Write/Erase Cycles | 10ms | I2C | 1010DDDR | EEPROM | I2C | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V321L25PFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | yes | Active | 3 (168 Hours) | 64 | EAR99 | 85°C | -40°C | 3.3V | 2 | 14mm | RoHS Compliant | Lead Free | No | 64 | TQFP | Parallel | 3.6V | 3V | 16 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 130mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 64 | INDUSTRIAL | 0.8mm | SRAMs | 3-STATE | 25 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.004A | 8b | COMMON | 2V |
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S25FS064SDSMFV010 Cypress Semiconductor Corp
FS-S Memory IC FS-S Series 5.283mm mm
Price: 0.0000
RFQ -
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MT47H128M8BT-5E L:A Micron Technology Inc.
1.8V V 92 Pin Memory IC MT47H128M8 19mm mm
Price: 0.0000
RFQ -
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IDT71T75602S200PFG8 Integrated Device Technology (IDT)
2.5V V 100 Pin Memory IC 20mm mm
Price: 0.0000
RFQ -
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M25PX32-VMP6E Micron Technology Inc.
Surface Mount 8 Pin Memory IC M25PX32 32 Mb kb 6mm mm 12mA mA 8b b
Price: 0.0000
RFQ -
71321SA35J8 Integrated Device Technology (IDT)
5V V Surface Mount 52 Pin Memory IC 16 kb kb 19mm mm 165mA mA 8b b
Price: 0.0000
RFQ -
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MT29F16G08AJADAWP:D Micron Technology Inc.
Surface Mount Memory IC MT29F16G08 16 Gb kb 35mA mA 8b b
Price: 0.0000
RFQ -
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7016S12PF Integrated Device Technology (IDT)
Surface Mount 80 Pin Memory IC 144 kb kb 14mm mm 325mA mA 9b b
Price: 0.0000
RFQ -
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71V321L25PFGI Integrated Device Technology (IDT)
Surface Mount 64 Pin Memory IC 16 kb kb 14mm mm 130mA mA 8b b
Price: 0.0000
RFQ
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