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Home Home Discrete Semiconductors Single BJT Transistors 2N3055
2N3055
  • 2N3055
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2N3055

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Manufacturer No:

2N3055

Manufacturer:

STMicroelectronics

HK JDW NO:

761-2N3055

Package:

TO-204AA, TO-3

Datasheet:

2N3055

Description:

2N3055 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at HK JDW

Quantity:

Add to RFQ list

In Stock : 999

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Product Details

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2N3055 Description

The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor that is housed in a Jedec TO-3 metal casing. Power switching circuits, series and shunt regulators, output stages, and high fidelity amplifiers are among the applications for the 2N3055 transistor. MJ2955 is the complementary PNP type.


2N3055 Features

  • The excellent safe operating area

  • The low collector-emitter saturation voltage

  • Medium power transistor

  • Pb?free packages are available

  • DC current gain (hFE) up to 70

  • With hfe improved linearity

  • Complementary NPN - PNP transistors

  • The maximum voltage across collector and emitter: 60V DC

  • Maximum current allowed through collector: 15A DC

  • The maximum voltage across base and emitter: 7V DC

  • Maximum current allowed through base: 7A DC

  • The maximum voltage across collector and base: 100V DC

  • Operating temperature range: -65oC to +200oC

  • Total power dissipation: 115W


2N3055 Applications

  • PWM applications

  • Regulator circuits

  • Power switching circuits

  • Amplifier circuits

  • Switch-mode power supply

  • Signal Amplifiers



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East West Bank charge US$30.00 banking fee.
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Shipping

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

2N3055

technical specifications, attributes, parameters and parts with similar specifications to 2N3055.

  • Type
    Parameter
    Select All

  • Mount

    Chassis Mount, Through Hole

  • Mounting Type

    Chassis Mount

  • Package / Case

    TO-204AA, TO-3

  • Number of Pins

    2

  • Weight

    4.535924g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    200°C TJ

  • Packaging

    Tray

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin (Sn)

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    60V

  • Max Power Dissipation

    115W

  • Terminal Position

    BOTTOM

  • Terminal Form

    PIN/PEG

  • Current Rating

    15A

  • Base Part Number

    2N30

  • Pin Count

    2

  • Number of Elements

    1

  • Voltage

    60V

  • Element Configuration

    Single

  • Current

    15A

  • Power Dissipation

    115W

  • Case Connection

    COLLECTOR

  • Transistor Application

    SWITCHING

  • Gain Bandwidth Product

    3MHz

  • Polarity/Channel Type

    NPN

  • Transistor Type

    NPN

  • Collector Emitter Voltage (VCEO)

    60V

  • Max Collector Current

    15A

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    20 @ 4A 4V

  • Current - Collector Cutoff (Max)

    700μA

  • Vce Saturation (Max) @ Ib, Ic

    3V @ 3.3A, 10A

  • Collector Emitter Breakdown Voltage

    60V

  • Transition Frequency

    3MHz

  • Collector Emitter Saturation Voltage

    1V

  • Max Breakdown Voltage

    100V

  • Collector Base Voltage (VCBO)

    100V

  • Emitter Base Voltage (VEBO)

    7V

  • hFE Min

    20

  • VCEsat-Max

    3 V

  • Height

    8.7mm

  • Length

    39.5mm

  • Width

    26.2mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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2N3055 Related Categories

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