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2N6609
2N6609
598-2N6609
TO-204AA, TO-3
2N6609 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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2N6609 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 8A 4V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.4V.When VCE saturation is 4V @ 3.2A, 16A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.Its current rating is -16A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 4MHz.A maximum collector current of 16A volts is possible.
2N6609 Features
the DC current gain for this device is 15 @ 8A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 7V
the current rating of this device is -16A
a transition frequency of 4MHz
2N6609 Applications
There are a lot of ON Semiconductor 2N6609 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
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2N6609
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