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2SA1298-Y,LF
2SA1298-Y,LF
4669-2SA1298-Y,LF
TO-236-3, SC-59, SOT-23-3
2SA1298-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at HK JDW
In Stock : 999
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Product Details
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2SA1298-Y,LF Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is -400mV, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 20mA, 500mA.Continuous collector voltages should be kept at -800mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.Single BJT transistor can be broken down at a voltage of 25V volts.During maximum operation, collector current can be as low as 800mA volts.
2SA1298-Y,LF Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at -5V
2SA1298-Y,LF Applications
There are a lot of Toshiba Semiconductor and Storage 2SA1298-Y,LF applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
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2SA1298-Y,LF
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