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2SD1757KT146R
2SD1757KT146R
687-2SD1757KT146R
TO-236-3, SC-59, SOT-23-3
2SD1757KT146R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at HK JDW
In Stock : 999
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2SD1757KT146R Overview
This device has a DC current gain of 120 @ 100mA 3V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 100mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 500mA is necessary for high efficiency.With the emitter base voltage set at 6.5V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 15V volts.A maximum collector current of 500mA volts can be achieved.
2SD1757KT146R Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 6.5V
the current rating of this device is 500mA
a transition frequency of 150MHz
2SD1757KT146R Applications
There are a lot of ROHM Semiconductor 2SD1757KT146R applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
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2SD1757KT146R
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