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2SD2150T100S
2SD2150T100S
687-2SD2150T100S
TO-243AA
2SD2150T100S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at HK JDW
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2SD2150T100S Overview
DC current gain in this device equals 270 @ 100mA 2V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltage should be kept at 3A for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).290MHz is present in the transition frequency.As a result, it can handle voltages as low as 20V volts.A maximum collector current of 3A volts can be achieved.
2SD2150T100S Features
the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 290MHz
2SD2150T100S Applications
There are a lot of ROHM Semiconductor 2SD2150T100S applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
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2SD2150T100S
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