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BC847BLP-7B
BC847BLP-7B
233-BC847BLP-7B
3-UFDFN
BC847BLP-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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BC847BLP-7B Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Continuous collector voltages should be kept at 100mA to achieve high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.In this part, there is a transition frequency of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.A maximum collector current of 100mA volts is possible.
BC847BLP-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847BLP-7B Applications
There are a lot of Diodes Incorporated BC847BLP-7B applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
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BC847BLP-7B
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