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BCP55TA
BCP55TA
233-BCP55TA
TO-261-4, TO-261AA
BCP55TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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Product Details
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BCP55TA Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 5V for high efficiency.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As a result, the part has a transition frequency of 150MHz.There is a breakdown input voltage of 60V volts that it can take.During maximum operation, collector current can be as low as 1A volts.
BCP55TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 150MHz
BCP55TA Applications
There are a lot of Diodes Incorporated BCP55TA applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
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BCP55TA
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