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BDX34B
BDX34B
598-BDX34B
TO-220-3
PNP - Darlington-65°C~150°C TJ500μA1 Elements3 TerminationsSILICONTO-220-3TubeThrough Hole
In Stock : 999
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Product Details
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BDX34B Overview
This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 6mA, 3A.Single BJT transistor is recommended to keep the continuous collector voltage at -10A in order to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -10A.As you can see, the part has a transition frequency of 3MHz.Single BJT transistor can be broken down at a voltage of 80V volts.A maximum collector current of 10A volts is possible.
BDX34B Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 3MHz
BDX34B Applications
There are a lot of ON Semiconductor BDX34B applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
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BDX34B
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