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BUT11AFTU
BUT11AFTU
598-BUT11AFTU
TO-220-3 Full Pack
BUT11AFTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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BUT11AFTU Overview
A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 500mA, 2.5A.The emitter base voltage can be kept at 9V for high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 5A.Parts of this part have transition frequencies of 4MHz.The breakdown input voltage is 450V volts.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
BUT11AFTU Features
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 500mA, 2.5A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
a transition frequency of 4MHz
BUT11AFTU Applications
There are a lot of ON Semiconductor BUT11AFTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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BUT11AFTU
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