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CSD16322Q5C

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Manufacturer No:

CSD16322Q5C

Manufacturer:

Texas Instruments

HK JDW NO:

815-CSD16322Q5C

Package:

8-PowerTDFN

Datasheet:

CSD16322Q5C

Description:

CSD16322Q5C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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CSD16322Q5C   Description

 

 The NexFET Power MOSFET is designed to minimize loss in power conversion applications and is optimized for 5V gate drive applications.

 


CSD16322Q5C    FEATURES


DualCoolM Package SON 5x6mm

Optimized for Two Sided Cooling

Optimized for 5V Gate Drive

Ultralow Qg and Qgd

Low Thermal Resistance

Avalanche Rated

Pb Free Terminal Plating

RoHS Compliant and Halogen Free


CSD16322Q5C     APPLICATIONS


Point-of-Load Synchronous Buck in Networking,Telecomand Computing Systems

Optimized for Synchronous or Control FET Applications

 

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

CSD16322Q5C

technical specifications, attributes, parameters and parts with similar specifications to CSD16322Q5C.

  • Type
    Parameter
    Select All
  • Lifecycle Status

    NRND (Last Updated: 4 weeks ago)

  • Contact Plating

    Tin

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-PowerTDFN

  • Number of Pins

    8

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Series

    NexFET™

  • JESD-609 Code

    e3

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    5

  • ECCN Code

    EAR99

  • Additional Feature

    AVALANCHE RATED

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Terminal Form

    NO LEAD

  • Peak Reflow Temperature (Cel)

    260

  • Reach Compliance Code

    not_compliant

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • Base Part Number

    CSD16322

  • Pin Count

    8

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Power Dissipation-Max

    3.1W Ta

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    3.1W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    6.1 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    5m Ω @ 20A, 8V

  • Vgs(th) (Max) @ Id

    1.4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1365pF @ 12.5V

  • Current - Continuous Drain (Id) @ 25°C

    21A Ta 97A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    9.7nC @ 4.5V

  • Rise Time

    10.7ns

  • Drain to Source Voltage (Vdss)

    25V

  • Drive Voltage (Max Rds On,Min Rds On)

    3V 8V

  • Vgs (Max)

    +10V, -8V

  • Fall Time (Typ)

    3.7 ns

  • Turn-Off Delay Time

    12.3 ns

  • Continuous Drain Current (ID)

    97A

  • Threshold Voltage

    1.1V

  • Gate to Source Voltage (Vgs)

    10V

  • Drain-source On Resistance-Max

    0.007Ohm

  • DS Breakdown Voltage-Min

    25V

  • Nominal Vgs

    1.1 V

  • Height

    1.05mm

  • Length

    5mm

  • Width

    6mm

  • Thickness

    1mm

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Contains Lead

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