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  • CSD17303Q5

CSD17303Q5

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Manufacturer No:

CSD17303Q5

Manufacturer:

Texas Instruments

HK JDW NO:

815-CSD17303Q5

Package:

8-PowerTDFN

Datasheet:

CSD17303Q5

Description:

CSD17303Q5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at HK JDW

Quantity:

In Stock : 999

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CSD17303Q5 Description


CSD17303Q5 is a 30V N channel NexFET? power MOSFET. The NexFET? power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET CSD17303Q5 is in the VSON-CLIP-8 package with 3.2W power dissipation. 



CSD17303Q5 Features


  • Ultralow Qg and Qgd

  • Optimized for 5V Gate Drive

  • Low Thermal Resistance

  • Avalanche Rated

  • Pb Free Terminal Plating

  • RoHS Compliant

  • Halogen Free

  • SON 5-mm × 6-mm Plastic Package



CSD17303Q5 Applications


  • Notebook Point-of-Load

  • Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems

  • Optimized for Synchronous FET Applications


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

CSD17303Q5

technical specifications, attributes, parameters and parts with similar specifications to CSD17303Q5.

  • Type
    Parameter
    Select All
  • Drain to Source Breakdown Voltage

    30V

  • Pulsed Drain Current-Max (IDM)

    200A

  • Avalanche Energy Rating (Eas)

    530 mJ

  • Nominal Vgs

    1.1 V

  • Height

    1.05mm

  • Length

    5mm

  • Width

    6mm

  • Thickness

    1mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    Non-RoHS Compliant

  • Lead Free

    Contains Lead

  • Factory Lead Time

    6 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 4 days ago)

  • Contact Plating

    Tin

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-PowerTDFN

  • Number of Pins

    8

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Series

    NexFET™

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    5

  • ECCN Code

    EAR99

  • Additional Feature

    AVALANCHE RATED

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Peak Reflow Temperature (Cel)

    260

  • Base Part Number

    CSD17303

  • Pin Count

    8

  • Number of Elements

    1

  • Power Dissipation-Max

    3.2W Ta

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    3.2W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    11.4 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    2.4m Ω @ 25A, 8V

  • Vgs(th) (Max) @ Id

    1.6V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    3420pF @ 15V

  • Current - Continuous Drain (Id) @ 25°C

    32A Ta 100A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    23nC @ 4.5V

  • Rise Time

    16ns

  • Drive Voltage (Max Rds On,Min Rds On)

    3V 8V

  • Vgs (Max)

    +10V, -8V

  • Fall Time (Typ)

    10.4 ns

  • Turn-Off Delay Time

    27 ns

  • Continuous Drain Current (ID)

    100A

  • Threshold Voltage

    1.1V

  • Gate to Source Voltage (Vgs)

    10V

  • Drain-source On Resistance-Max

    0.0037Ohm

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