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  • CSD85301Q2

CSD85301Q2

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Manufacturer No:

CSD85301Q2

Manufacturer:

Texas Instruments

HK JDW NO:

815-CSD85301Q2

Package:

6-WDFN Exposed Pad

Datasheet:

-

Description:

CSD85301Q2 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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CSD85301Q2       Description

 

  The CSD8530102 is a 20V23mQ N-Channe device in SON2X2 mm plastic package and dual independent MOSFET. The two FET are designed as half-bridge structures for synchronous buck and other power applications. In addition, the device can be used in adapters, USB input protection and battery charging applications. The dual field effect transistor has a low drain-to-source turn-on resistance that minimizes loss and loss.

There are fewer parts with limited space.

 

CSD85301Q2              Features


Low On-Resistance

Dual Independent MOSFETs

Space Saving SON2x2 mm Plastic Package
Optimized for 5 V Gate Driver

Avalanche Rated

Pb and Halogen Free

RoHS Compliant

 

CSD85301Q2            Applications

Point-of-Load Synchronous Buck Converter for Applications in NetworkingTelecom.and Computing Systems

Adaptor or USB Input Protection for Notebook PCs and Tablets

Battery Protection

 




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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

CSD85301Q2

technical specifications, attributes, parameters and parts with similar specifications to CSD85301Q2.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    6 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 2 days ago)

  • Contact Plating

    Tin

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    6-WDFN Exposed Pad

  • Number of Pins

    6

  • Weight

    9.695537mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Series

    NexFET™

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    6

  • ECCN Code

    EAR99

  • Additional Feature

    AVALANCHE RATED

  • Max Power Dissipation

    2.3W

  • Terminal Form

    NO LEAD

  • Base Part Number

    CSD85301

  • Number of Elements

    2

  • Number of Channels

    2

  • Element Configuration

    Dual

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Turn On Delay Time

    6 ns

  • FET Type

    2 N-Channel (Dual)

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    27m Ω @ 5A, 4.5V

  • Vgs(th) (Max) @ Id

    1.2V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    469pF @ 10V

  • Gate Charge (Qg) (Max) @ Vgs

    5.4nC @ 4.5V

  • Rise Time

    26ns

  • Drain to Source Voltage (Vdss)

    20V

  • Fall Time (Typ)

    15 ns

  • Turn-Off Delay Time

    14 ns

  • Continuous Drain Current (ID)

    5A

  • Gate to Source Voltage (Vgs)

    10V

  • Drain Current-Max (Abs) (ID)

    5A

  • Drain-source On Resistance-Max

    0.039Ohm

  • Avalanche Energy Rating (Eas)

    3.8 mJ

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • FET Feature

    Logic Level Gate, 5V Drive

  • Height

    800μm

  • Length

    2mm

  • Width

    2mm

  • Thickness

    750μm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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