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Home Home Discrete Semiconductors Single MOSFETs Transistors DMG4496SSS-13
DMG4496SSS-13
  • DMG4496SSS-13
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DMG4496SSS-13

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Manufacturer No:

DMG4496SSS-13

Manufacturer:

Diodes Incorporated

HK JDW NO:

233-DMG4496SSS-13

Package:

8-SOIC (0.154, 3.90mm Width)

Datasheet:

DMG4496SSS-13

Description:

MOSFET (Metal Oxide) N-Channel Digi-Reel® 21.5m Ω @ 10A, 10V ±25V 493.5pF @ 15V 10.2nC @ 10V 8-SOIC (0.154, 3.90mm Width)

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In Stock : 999

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Product Details

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DMG4496SSS-13 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 493.5pF @ 15V.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 19.5 ns.Peak drain current for this device is 60A, which is its maximum pulsed drain current.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 4.76 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This device reduces its overall power consumption by using drive voltage (4.5V 10V).

DMG4496SSS-13 Features


a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 19.5 ns
based on its rated peak drain current 60A.

DMG4496SSS-13 Applications


There are a lot of Diodes Incorporated DMG4496SSS-13 applications of single MOSFETs transistors.

  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Industrial Power Supplies
  • Synchronous Rectification
  • Power Management Functions
  • Battery Protection Circuit
  • Motor drives and Uninterruptible Power Supplies
  • Load switching
  • Lighting
  • Uninterruptible Power Supply
  • LCD/LED TV
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EmailEmail for receiving inquiries: jindawei@hkjdwchip.com

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

DMG4496SSS-13

technical specifications, attributes, parameters and parts with similar specifications to DMG4496SSS-13.

  • Type
    Parameter
    Select All

  • Factory Lead Time

    16 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-SOIC (0.154, 3.90mm Width)

  • Number of Pins

    8

  • Weight

    73.992255mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Digi-Reel®

  • Published

    2013

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    8

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn)

  • Subcategory

    FET General Purpose Powers

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    40

  • Pin Count

    8

  • Number of Elements

    1

  • Number of Channels

    1

  • Power Dissipation-Max

    1.42W Ta

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    1.42W

  • Turn On Delay Time

    4.76 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    21.5m Ω @ 10A, 10V

  • Vgs(th) (Max) @ Id

    2V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    493.5pF @ 15V

  • Current - Continuous Drain (Id) @ 25°C

    10A Ta

  • Gate Charge (Qg) (Max) @ Vgs

    10.2nC @ 10V

  • Rise Time

    3.64ns

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±25V

  • Fall Time (Typ)

    4.9 ns

  • Turn-Off Delay Time

    19.5 ns

  • Continuous Drain Current (ID)

    10A

  • Gate to Source Voltage (Vgs)

    25V

  • Drain to Source Breakdown Voltage

    30V

  • Pulsed Drain Current-Max (IDM)

    60A

  • Height

    1.5mm

  • Length

    4.95mm

  • Width

    3.95mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

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