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FDB2710
FDB2710
598-FDB2710
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB2710 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
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FDB2710 N-Channel MOSFET Description
The FDB2710 is an exceptional high-performance N-Channel MOSFET with a 250V rating and 50 A continuous Drain current withstand capability. With a relatively low gate charge and a low on-resistance of only 36.3 m?, it is capable of the most demanding applications.
FDB2710 N-Channel MOSFET Features
RDS(on) = 36.3m? (Typ.) @ VGS = 10V, ID = 25A
High-performance trench technology for extremely low RDS(on)
Low Gate Charge
High power and current handing capability
NPT design for outstanding reliability
FDB2710 N-Channel MOSFET Applications
Consumer appliances
Low noise switching
High power switching
Battery protection
High-speed switching
HV technology
Circuit protections
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FDB2710
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