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FDC365P
FDC365P
598-FDC365P
SOT-23-6 Thin, TSOT-23-6
FDC365P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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FDC365P Description
FDC365P is a P-Channel PowerTrench? MOSFET. This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench? technology to deliver low IDs(on) and optimized Bvdss capability to offer superior performance benefits in the applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDC365P is in the SSOT-6 package with 1.6W power dissipation.
FDC365P Features
Max rDS(on) = 55mΩ at VGS = 10V, ID = -4.2A
Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A
RoHS compliant
Drain to Source Voltage: -35v
Gate to Source Voltage: ±20v
FDC365P Applications
Inverter
Power Supplies
Computers
Electric Vehicles
Welding
Aircraft
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FDC365P
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