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FDC6303N

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Manufacturer No:

FDC6303N

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FDC6303N

Package:

SOT-23-6 Thin, TSOT-23-6

Datasheet:

FDC6303N

Description:

FDC6303N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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FDC6303N          Description


These dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.

 

FDC6303N        Features

 

25 V, 0.68 A continuous, 2 A Peak

RDS(ON) = 0.6 |? @ VGS = 2.7 V

RDS(ON) = 0.45 |? @ VGS= 4.5 V

Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V

Gate-Source Zener for ESD ruggedness. >6kV Human Body Model

Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET


FDC6303N             Applications


This product is general usage and suitable for many different applications.

 





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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FDC6303N

technical specifications, attributes, parameters and parts with similar specifications to FDC6303N.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    10 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 1 day ago)

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    SOT-23-6 Thin, TSOT-23-6

  • Number of Pins

    6

  • Weight

    36mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    1997

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    6

  • Termination

    SMD/SMT

  • ECCN Code

    EAR99

  • Resistance

    450mOhm

  • Terminal Finish

    Tin (Sn)

  • Additional Feature

    LOGIC LEVEL COMPATIBLE

  • Subcategory

    FET General Purpose Power

  • Voltage - Rated DC

    25V

  • Max Power Dissipation

    900mW

  • Terminal Form

    GULL WING

  • Current Rating

    680mA

  • Number of Elements

    2

  • Number of Channels

    2

  • Element Configuration

    Dual

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    900mW

  • Turn On Delay Time

    3 ns

  • Power - Max

    700mW

  • FET Type

    2 N-Channel (Dual)

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    450m Ω @ 500mA, 4.5V

  • Vgs(th) (Max) @ Id

    1.5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    50pF @ 10V

  • Gate Charge (Qg) (Max) @ Vgs

    2.3nC @ 4.5V

  • Rise Time

    8.5ns

  • Fall Time (Typ)

    13 ns

  • Turn-Off Delay Time

    17 ns

  • Continuous Drain Current (ID)

    680mA

  • Threshold Voltage

    800mV

  • Gate to Source Voltage (Vgs)

    8V

  • Drain to Source Breakdown Voltage

    25V

  • Dual Supply Voltage

    25V

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • Max Junction Temperature (Tj)

    150°C

  • FET Feature

    Logic Level Gate

  • Nominal Vgs

    800 mV

  • Height

    1.1mm

  • Length

    3mm

  • Width

    1.7mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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