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FDD6680AS
FDD6680AS
598-FDD6680AS
TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6680AS datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
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FDD6680AS Description
The FDD6680AS is a SyncFET? N-channel MOSFET produced using the PowerTrench? process. It is designed to replace a single MOSFET and Schottky diode in synchronous DC-to-DC power supplies. This 30V MOSFET FDD6680AS is designed to maximize power conversion efficiency, providing a low RDS (ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using monolithic SyncFET technology. The performance is as the low-side switch in a synchronous rectifier is indistinguishable from the performance in parallel with a Schottky diode.
FDD6680AS Features
55A, 30V
RDS(ON) = 10.5 mΩ @ VGS = 10 V
RDS(ON) = 13.0 mΩ @ VGS = 4.5 V
Includes SyncFET? Schottky body diode
Low gate charge (21nC typical)
High-performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDD6680AS Applications
Cellular phones
Laptop computers
Photovoltaic systems
Wind turbines
Shunt voltage regulator and the series voltage regulator
Low side notebook
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FDD6680AS
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