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FDD850N10LD
FDD850N10LD
598-FDD850N10LD
TO-252-5, DPak (4 Leads + Tab), TO-252AD
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 75m Ω @ 12A, 10V ±20V 1465pF @ 25V 28.9nC @ 10V TO-252-5, DPak (4 Leads + Tab), TO-252AD
In Stock : 999
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Product Details
Purchasing and Inquiry
FDD850N10LD Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 41 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1465pF @ 25V maximal input capacitance.This device's continuous drain current (ID) is 15.3A, which represents the maximum continuous current it can conduct.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 27 ns.There is a peak drain current of 46A, its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (5V 10V) reduces this device's overall power consumption.
FDD850N10LD Features
the avalanche energy rating (Eas) is 41 mJ
a continuous drain current (ID) of 15.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 27 ns
based on its rated peak drain current 46A.
FDD850N10LD Applications
There are a lot of ON Semiconductor FDD850N10LD applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Load switching
- DC-to-DC converters
- Consumer Appliances
- Motor drives and Uninterruptible Power Supplies
- Motor Drives and Uninterruptible Power Supples
- LCD/LED TV
- Power Management Functions
- Micro Solar Inverter
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FDD850N10LD
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