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  • FDMC2514SDC

FDMC2514SDC

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Manufacturer No:

FDMC2514SDC

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FDMC2514SDC

Package:

8-PowerTDFN

Datasheet:

FDMC2514SDC

Description:

FDMC2514SDC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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FDMC2514SDC Description

This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench? process.

Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on)

while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the 

added benefit of an efficient monolithic Schottky body diode.


FDMC2514SDC Features

Dual CoolTM Top Side Cooling PQFN package

Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 22.5 A

Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A

High-performance technology for extremely low RDS(on)

SyncFET Schottky Body Diode

RoHS Compliant


FDMC2514SDC Applications

Synchronous Rectifier for DC/DC Converters

Telecom Secondary Side Rectification

High End Server/Workstation Vcore Low Side


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The fee is charged according to the rule of PayPal.
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FDMC2514SDC

technical specifications, attributes, parameters and parts with similar specifications to FDMC2514SDC.

  • Type
    Parameter
    Select All
  • Nominal Vgs

    1.7 V

  • Height

    950μm

  • Length

    3.3mm

  • Width

    3.3mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Factory Lead Time

    8 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 4 days ago)

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-PowerTDFN

  • Number of Pins

    8

  • Weight

    32.13mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2009

  • Series

    Dual Cool™, PowerTrench®, SyncFET™

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    5

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin (Sn)

  • Additional Feature

    ULTRA-LOW RESISTANCE

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • JESD-30 Code

    S-PDSO-N5

  • Number of Elements

    1

  • Power Dissipation-Max

    3W Ta 60W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    3W

  • Case Connection

    DRAIN SOURCE

  • Turn On Delay Time

    11 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    3.5m Ω @ 22.5A, 10V

  • Vgs(th) (Max) @ Id

    3V @ 1mA

  • Input Capacitance (Ciss) (Max) @ Vds

    2705pF @ 13V

  • Current - Continuous Drain (Id) @ 25°C

    24A Ta 40A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    44nC @ 10V

  • Rise Time

    3.6ns

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    3 ns

  • Turn-Off Delay Time

    26 ns

  • Continuous Drain Current (ID)

    24A

  • Threshold Voltage

    1.7V

  • JEDEC-95 Code

    MO-240BA

  • Gate to Source Voltage (Vgs)

    20V

  • Drain Current-Max (Abs) (ID)

    40A

  • Drain-source On Resistance-Max

    0.0035Ohm

  • Drain to Source Breakdown Voltage

    25V

  • Pulsed Drain Current-Max (IDM)

    200A

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