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  • FDP52N20

FDP52N20

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Manufacturer No:

FDP52N20

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FDP52N20

Package:

TO-220-3

Datasheet:

FDP52N20

Description:

FDP52N20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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FDP52N20 Description


FDP52N20 is a type of N-channel enhancement-mode power field-effect transistor that is manufactured by ON Semiconductor based on proprietary, planar stripe, DMOS technology. On the basis of this technology, it is capable of minimizing on-state resistance, providing superior switching performance, and withstanding high energy pulse in the avalanche and commutation mode. As a result, FDP52N20 is ideally suitable for power supplies in the high efficient switching mode power supplies and active power factor correction (PFC). More information can be found in the FDP52N20 datasheet.



FDP52N20 Features


  • Low gate charge

  • Better dv/dt capability

  • Advanced switching performance

  • Planar stripe, DMOS technology

  • Available in the TO-220 package



FDP52N20 Applications


  • High efficient switching mode power supplies

  • Active power factor correction (PFC)


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FDP52N20

technical specifications, attributes, parameters and parts with similar specifications to FDP52N20.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    4 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 3 days ago)

  • Contact Plating

    Tin

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3

  • Number of Pins

    3

  • Weight

    1.8g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Published

    2007

  • Series

    UniFET™

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Resistance

    49MOhm

  • Additional Feature

    AVALANCHE ENERGY RATED

  • Subcategory

    FET General Purpose Power

  • Voltage - Rated DC

    200V

  • Technology

    MOSFET (Metal Oxide)

  • Current Rating

    52A

  • Number of Elements

    1

  • Power Dissipation-Max

    357W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    357W

  • Turn On Delay Time

    53 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    49m Ω @ 26A, 10V

  • Vgs(th) (Max) @ Id

    5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    2900pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    52A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    63nC @ 10V

  • Rise Time

    175ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±30V

  • Fall Time (Typ)

    29 ns

  • Turn-Off Delay Time

    48 ns

  • Continuous Drain Current (ID)

    52A

  • Threshold Voltage

    5V

  • JEDEC-95 Code

    TO-220AB

  • Gate to Source Voltage (Vgs)

    30V

  • Drain to Source Breakdown Voltage

    200V

  • Pulsed Drain Current-Max (IDM)

    208A

  • Avalanche Energy Rating (Eas)

    2520 mJ

  • Height

    9.4mm

  • Length

    10.1mm

  • Width

    4.7mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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