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FDS6680AS
FDS6680AS
598-FDS6680AS
8-SOIC (0.154, 3.90mm Width)
FDS6680AS datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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FDS6680AS Description
The FDS6680AS is a 30V N-channel PowerTrench? SyncFET having been specially tailored to minimize the on-state resistance and maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDS6680AS is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr), and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using monolithic SyncFET technology. This product is general usage and suitable for many different applications.
FDS6680AS Features
11.5A, 30V
RDS(ON) = 8.0 mΩ @ VGS = 10V
RDS(ON) = 10.5 mΩ @ VGS = 4.5V
Includes SyncFET Schottky body diode
Low gate charge (22nC typical)
High-performance trench technology for extremely low RDS(ON) and fast switching
High power and current handling capability
FDS6680AS Applications
DC/DC Converters
Low Side Notebook
Cellular phones
Laptop computers
Photovoltaic systems
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FDS6680AS
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