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FDT434P
FDT434P
598-FDT434P
TO-261-4, TO-261AA
FDT434P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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FDT434P Description
FDT434P is a P-Channel Power Trench MOSFET with a voltage of 2.5V from the manufacturer of ON Semiconductor. The operating temperature of FDT434P is -55°C~150°C TJ and its maximum power dissipation are 3W Ta. It is available in TO-261-4, TO-261AA packaging way. This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been specially tailored to minimize the on-state resistance and yet maintain a low gate charge for superior switching performance.
FDT434P Features
Low gate charge (13nC typical)
High-performance trench technology for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
FDT434P Applications
Low Dropout Regulator
DC/DC converter
Load switch
Motor driving
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FDT434P
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