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  • FQB19N20LTM

FQB19N20LTM

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Manufacturer No:

FQB19N20LTM

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FQB19N20LTM

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Datasheet:

FQB19N20LTM

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 140m Ω @ 10.5A, 10V ±20V 2200pF @ 25V 35nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Quantity:

In Stock : 999

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Product Details

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FQB19N20LTM Description


Fairchild Semiconductor's patented planar stripe and DMOS technology were used to create this N-Channel enhancement mode power MOSFET. This sophisticated MOSFET technology has been specifically developed to lower on-state resistance, improve switching performance, and increase avalanche energy strength. Switched-mode power supply, active power factor correction (PFC), and electronic light ballasts can all benefit from FQB19N20LTM devices.


FQB19N20LTM Features



? 21?A, 200 V, RDS(on) = 140 m? (Max.) @ VGS = 10 V,.ID = 9.7 A

? Low Gate Charge (Typ. 31 nC)

? Low Crss (Typ. 30 pF)

? 100% Avalanche Tested

? RoHS Compliant



FQB19N20LTM Applications


? Switched-mode power supplies

? Active power factor correction (PFC)

? Electronic lamp ballasts

? Switch application


1. Purchase

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Tell us the model and quantity you need, our sales staff will reply the price in time.
EmailEmail for receiving inquiries: jindawei@hkjdwchip.com

2. Means of Payment

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3. RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

4. Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

Purchasing and Inquiry

Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FQB19N20LTM

technical specifications, attributes, parameters and parts with similar specifications to FQB19N20LTM.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    7 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 16 hours ago)

  • Contact Plating

    Tin

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2000

  • Series

    QFET®

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Resistance

    140MOhm

  • Subcategory

    FET General Purpose Power

  • Voltage - Rated DC

    200V

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Form

    GULL WING

  • Current Rating

    21A

  • JESD-30 Code

    R-PSSO-G2

  • Number of Elements

    1

  • Voltage

    200V

  • Power Dissipation-Max

    3.13W Ta 140W Tc

  • Element Configuration

    Single

  • Current

    17A

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    3.13W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    35 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    140m Ω @ 10.5A, 10V

  • Vgs(th) (Max) @ Id

    2V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    2200pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    21A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    35nC @ 5V

  • Rise Time

    300ns

  • Drive Voltage (Max Rds On,Min Rds On)

    5V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    180 ns

  • Turn-Off Delay Time

    130 ns

  • Continuous Drain Current (ID)

    21mA

  • Threshold Voltage

    2V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    200V

  • Avalanche Energy Rating (Eas)

    250 mJ

  • Nominal Vgs

    2 V

  • Height

    4.83mm

  • Length

    10.67mm

  • Width

    9.65mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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