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FQNL2N50BTA
FQNL2N50BTA
598-FQNL2N50BTA
TO-226-3, TO-92-3 Long Body (Formed Leads)
MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 5.3 Ω @ 175mA, 10V ±30V 230pF @ 25V 8nC @ 10V TO-226-3, TO-92-3 Long Body (Formed Leads)
In Stock : 999
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Product Details
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FQNL2N50BTA Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 230pF @ 25V maximal input capacitance.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 350mA.Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.It is [10 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 6 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Using drive voltage (10V) reduces this device's overall power consumption.
FQNL2N50BTA Features
a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 10 ns
FQNL2N50BTA Applications
There are a lot of ON Semiconductor FQNL2N50BTA applications of single MOSFETs transistors.
- Power Tools
- Synchronous Rectification
- General Purpose Interfacing Switch
- Motor drives and Uninterruptible Power Supplies
- Load switching
- Industrial Power Supplies
- Solar Inverter
- Telecom 1 Sever Power Supplies
- Lighting
- LCD/LED TV
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FQNL2N50BTA
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