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FQPF10N60C
FQPF10N60C
598-FQPF10N60C
TO-220-3 Full Pack
MOSFET (Metal Oxide) N-Channel Tube 730m Ω @ 4.75A, 10V ±30V 2040pF @ 25V 57nC @ 10V TO-220-3 Full Pack
In Stock : 999
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FQPF10N60C Description
The FQPF10N60C is an N-Channel enhancement mode power field effect transistor made with ON Semiconductor's unique planar stripe DMOS technology. In the avalanche and commutation modes, this innovative technology has been specifically tuned to minimize on-state resistance, provide improved switching performance, and withstand high-energy pulses. FQPF10N60C transistors are ideal for high-efficiency switching mode power supply, active power factor correction, and half-bridge electronic light ballasts.
FQPF10N60C Features
Low Crss (Typ. 18 pF)
100% Avalanche Tested
9.5 A, 600 V, RDS(on) = 730 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A
Low Gate Charge (Typ. 44 nC)
FQPF10N60C Applications
Audio amplifier applications
Different types of signal amplification
Darlington pairs
Switching loads up to 150mA
Audio preamplifier applications
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Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.
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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
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| East West Bank charge US$30.00 banking fee. | |
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FQPF10N60C
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