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IRF6898MTRPBF

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Manufacturer No:

IRF6898MTRPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRF6898MTRPBF

Package:

DirectFET™ Isometric MX

Datasheet:

IRF6898MTRPBF

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.1m Ω @ 35A, 10V ±16V 5435pF @ 13V 62nC @ 4.5V DirectFET™ Isometric MX

Quantity:

In Stock : 999

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Product Details

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IRF6898MTRPBF Overview


The maximum input capacitance of this device is 5435pF @ 13V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 35A.This device has 25V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 25V.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 24 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 280A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 18 ns seconds.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 16V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1.6V threshold voltage.This device reduces its overall power consumption by using drive voltage (4.5V 10V).

IRF6898MTRPBF Features


a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 24 ns
based on its rated peak drain current 280A.
a threshold voltage of 1.6V

IRF6898MTRPBF Applications


There are a lot of Infineon Technologies IRF6898MTRPBF applications of single MOSFETs transistors.

  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • General Purpose Interfacing Switch
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Load switching
  • AC-DC Power Supply
  • Consumer Appliances
  • Micro Solar Inverter
  • Motor drives and Uninterruptible Power Supplies
  • DC-to-DC converters
  • DC/DC converters
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4. Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.
The following are some common countries' logistic time.

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Payment Method

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The fee is charged according to the rule of PayPal.
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DHL(www.dhl.com)
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UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRF6898MTRPBF

technical specifications, attributes, parameters and parts with similar specifications to IRF6898MTRPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    10 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    DirectFET™ Isometric MX

  • Number of Pins

    7

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -40°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2012

  • Series

    HEXFET®

  • Part Status

    Last Time Buy

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    BOTTOM

  • JESD-30 Code

    R-XBCC-N3

  • Number of Elements

    1

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • Power Dissipation-Max

    2.1W Ta 78W Tc

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    78W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    18 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    1.1m Ω @ 35A, 10V

  • Vgs(th) (Max) @ Id

    2.1V @ 100μA

  • Input Capacitance (Ciss) (Max) @ Vds

    5435pF @ 13V

  • Current - Continuous Drain (Id) @ 25°C

    35A Ta 213A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    62nC @ 4.5V

  • Rise Time

    46ns

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±16V

  • Fall Time (Typ)

    19 ns

  • Turn-Off Delay Time

    24 ns

  • Continuous Drain Current (ID)

    35A

  • Threshold Voltage

    1.6V

  • Gate to Source Voltage (Vgs)

    16V

  • Drain to Source Breakdown Voltage

    25V

  • Pulsed Drain Current-Max (IDM)

    280A

  • FET Feature

    Schottky Diode (Body)

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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