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IRFS4227PBF
IRFS4227PBF
376-IRFS4227PBF
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS4227PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW
In Stock : 999
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Product Details
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IRFS4227PBF Description
The IRFS4227PBF is a HEXFET? single N-channel Power MOSFET designed for sustain, energy recovery, and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this IRFS4227PBF a highly efficient, robust, and reliable device for PDP driving applications.
IRFS4227PBF Features
Advanced process technology
Low Qg for fast response
High repetitive peak current capability for reliable operation
Shortfall and rise times for fast switching
Repetitive avalanche capability for robustness and reliability
IRFS4227PBF Applications
Power Management
Consumer Electronics
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
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IRFS4227PBF
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