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IRL40S212
IRL40S212
376-IRL40S212
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL40S212 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW
In Stock : 999
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IRL40S212 Description
The IRL40S212 is a second-generation N-channel Power MOSFET based on MDmeshTM technology. This groundbreaking Power MOSFET combines a vertical structure with the company's strip layout to deliver one of the world's lowest on-resistance and gate charge. As a result, it's ideal for high-efficiency converters with the most stringent requirements.
IRL40S212 Features
Logic Level Drive (Logic Level Drive) optimized
Ruggedness of Gate, Avalanche, and Dynamic dV/dt has been improved.
Avalanche SOA and Fully Characterized Capacitance
Enhanced dV/dt and dI/dt capability of body diodes
Lead-Free
Halogen Free, RoHS Compliant
-Free
IRL40S212 Applications
Applications for brushed motor drives and BLDC motor drives
Circuits that are powered by batteries
Topologies of half-bridge and full-bridge
Applications for synchronous rectifiers
Power supply with a resonant mode
OR-ing and redundant power switches are two examples of redundant power switches.
-Free DC/DC and AC/DC converters -Free DC/AC Inverters
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IRL40S212
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