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MJF122G
MJF122G
598-MJF122G
TO-220-3 Full Pack
MJF122G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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MJF122G Overview
This device has a DC current gain of 2000 @ 3A 3V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 2V allows maximum design flexibility.When VCE saturation is 3.5V @ 20mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 5A for high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.In extreme cases, the collector current can be as low as 5A volts.
MJF122G Features
the DC current gain for this device is 2000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3.5V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
MJF122G Applications
There are a lot of ON Semiconductor MJF122G applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
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MJF122G
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