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NDS356AP
NDS356AP
598-NDS356AP
TO-236-3, SC-59, SOT-23-3
NDS356AP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
Purchasing and Inquiry
NDS356AP Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors. This ultra-high-density method has been specifically designed to reduce on-state resistance. These devices are ideal for low-voltage applications including notebook computer power management, portable electronics, and other battery-powered circuits that require fast high-side switching and low in-line power loss in a very compact shape surface mount package.
NDS356AP Features
Industry standard outline SOT-23 surface-mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
-1.1 A, -30 V
NDS356AP Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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NDS356AP
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