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NTLUS3A18PZTCG

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Manufacturer No:

NTLUS3A18PZTCG

Manufacturer:

ON Semiconductor

HK JDW NO:

598-NTLUS3A18PZTCG

Package:

6-UDFN Exposed Pad

Datasheet:

NTLUS3A18PZTCG

Description:

NTLUS3A18PZTCG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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NTLUS3A18PZTCG Description


Produced by On Semiconductor, the NTLUS3A18PZTCG. IGBT Transistors make up its category. It is used in a variety of industries, including projectors, enterprise systems, industrial lighting, and communications equipment. Additionally, this component's primary specifications are as follows: Single P-Channel Power MOSFET with ESD Protection -20V -8.2A 18m. It is also environmentally friendly and RoHS compliant (lead-free).



NTLUS3A18PZTCG Features


  • Ultra Low RDS(on)

  • ESD Diode-Protected Gate

  • Low Profile UDFN 2.0×2,0×0.55mm for Board Space Saving

  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

  • UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction



NTLUS3A18PZTCG Applications


  • Battery Switch

  • High Side Load Switch

  • Optimized for Power Management Applications for Portable products, such as Cell Phones, Media Tablets, PMP, DSC, GPS, and Others


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4. Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.
The following are some common countries' logistic time.

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Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

NTLUS3A18PZTCG

technical specifications, attributes, parameters and parts with similar specifications to NTLUS3A18PZTCG.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    2 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 2 days ago)

  • Mounting Type

    Surface Mount

  • Package / Case

    6-UDFN Exposed Pad

  • Surface Mount

    YES

  • Number of Pins

    6

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2012

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    6

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin (Sn)

  • Additional Feature

    ULTRA LOW RESISTANCE

  • Subcategory

    Other Transistors

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Pin Count

    6

  • Number of Elements

    1

  • Number of Channels

    1

  • Power Dissipation-Max

    700mW Ta

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • Turn On Delay Time

    8.6 ns

  • FET Type

    P-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    18m Ω @ 7A, 4.5V

  • Vgs(th) (Max) @ Id

    1V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    2240pF @ 15V

  • Current - Continuous Drain (Id) @ 25°C

    5.1A Ta

  • Gate Charge (Qg) (Max) @ Vgs

    28nC @ 4.5V

  • Rise Time

    15ns

  • Drain to Source Voltage (Vdss)

    20V

  • Drive Voltage (Max Rds On,Min Rds On)

    1.5V 4.5V

  • Vgs (Max)

    ±8V

  • Fall Time (Typ)

    88 ns

  • Turn-Off Delay Time

    150 ns

  • Continuous Drain Current (ID)

    5.1A

  • Gate to Source Voltage (Vgs)

    8V

  • Drain Current-Max (Abs) (ID)

    8.2A

  • Drain to Source Breakdown Voltage

    -20V

  • Radiation Hardening

    No

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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