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NTR4003NT3G

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Manufacturer No:

NTR4003NT3G

Manufacturer:

ON Semiconductor

HK JDW NO:

598-NTR4003NT3G

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

NTR4003NT3G

Description:

NTR4003NT3G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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NTR4003NT3G Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 21pF @ 5V.This device has a continuous drain current (ID) of [500mA], which is its maximum continuous current.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.There is no drain current on this device since the maximum continuous current it can conduct is 0.5A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65.1 ns.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 16.7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 800mV.Using drive voltage (2.5V 4V), this device contributes to a reduction in overall power consumption.

NTR4003NT3G Features


a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 65.1 ns
a threshold voltage of 800mV

NTR4003NT3G Applications


There are a lot of ON Semiconductor NTR4003NT3G applications of single MOSFETs transistors.

  • Telecom 1 Sever Power Supplies
  • Server power supplies
  • Uninterruptible Power Supply
  • Solar Inverter
  • Motor drives and Uninterruptible Power Supplies
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Power Management Functions
  • Battery Protection Circuit
  • Lighting, Server, Telecom and UPS.
  • PFC stages, hard switching PWM stages and resonant switching
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

NTR4003NT3G

technical specifications, attributes, parameters and parts with similar specifications to NTR4003NT3G.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    10 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 4 days ago)

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • Surface Mount

    YES

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2000

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Resistance

    1Ohm

  • Terminal Finish

    Tin (Sn)

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    40

  • Pin Count

    3

  • Number of Elements

    1

  • Power Dissipation-Max

    690mW Ta

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    690mW

  • Turn On Delay Time

    16.7 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    1.5 Ω @ 10mA, 4V

  • Vgs(th) (Max) @ Id

    1.4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    21pF @ 5V

  • Current - Continuous Drain (Id) @ 25°C

    500mA Ta

  • Gate Charge (Qg) (Max) @ Vgs

    1.15nC @ 5V

  • Rise Time

    47.9ns

  • Drive Voltage (Max Rds On,Min Rds On)

    2.5V 4V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    47.9 ns

  • Turn-Off Delay Time

    65.1 ns

  • Continuous Drain Current (ID)

    500mA

  • Threshold Voltage

    800mV

  • Gate to Source Voltage (Vgs)

    20V

  • Drain Current-Max (Abs) (ID)

    0.5A

  • Drain to Source Breakdown Voltage

    30V

  • Height

    1.01mm

  • Length

    3.04mm

  • Width

    1.4mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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