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PBSS5540Z,115
PBSS5540Z,115
554-PBSS5540Z,115
TO-261-4, TO-261AA
PBSS5540Z,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at HK JDW
In Stock : 999
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Product Details
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PBSS5540Z,115 Overview
This device has a DC current gain of 150 @ 2A 2V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 160mV @ 200mA, 2A.In the part, the transition frequency is 120MHz.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
PBSS5540Z,115 Features
the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 160mV @ 200mA, 2A
a transition frequency of 120MHz
PBSS5540Z,115 Applications
There are a lot of Nexperia USA Inc. PBSS5540Z,115 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
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