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PTFA190451EV4R250XTMA1
PTFA190451EV4R250XTMA1
376-PTFA190451EV4R250XTMA1
H-36265-2
PTFA190451EV4R250XTMA1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Infineon Technologies stock available at HK JDW
In Stock : 999
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Product Details
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PTFA190451EV4R250XTMA1 Description
The 45-watt, internally matched, thermally enhanced LDMOS FET PTFA190451EV4R250XTMA1 is made for WCDMA, TD-SCDMA, and other cellular technologies in the 1930 to 1990 MHz frequency range. These gadgets come in ear- or earless-flanged thermally-enhanced packaging. These devices are produced using Infineon's cutting-edge LDMOS technology, and they offer outstanding thermal performance and high reliability.
PTFA190451EV4R250XTMA1 Features
Integrated ESD protection: Human Body Model, Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power
Pb-free and RoHS compliant
Broadband internal matching
Typical two-carrier WCDMA performance at 1960 MHz, 28 V
- Average output power = 11 W
- Linear gain = 17.5 dB
- Efficiency = 28.0%
- Intermodulation distortion = –39 dBc
- Adjacent channel power = –42 dBc
Typical CW performance, 1960 MHz, 28 V
- Output power at P–1dB = 60 W
- Efficiency = 60%
PTFA190451EV4R250XTMA1 Applications
Low Noise Amplifier
Buffer Amplifier
Cascode Amplifier
Analog Switch
Chopper Amplifier
Multiplexer
Current Limiter
Phase Shift Oscillators
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PTFA190451EV4R250XTMA1
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