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SMMBT3906LT1G
SMMBT3906LT1G
onsemi-SMMBT3906LT1G
onsemi
Bipolar Transistor - Bipolar Junction Transistor (BJT) SS GP XSTR SPCL TR
In Stock : 10000
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Product Details
Purchasing and Inquiry
This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -250mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
SMMBT3906LT1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
SMMBT3906LT1G Applications
There are a lot of ON Semiconductor SMMBT3906LT1G applications of single BJT transistors.
Driver
Interface
Muting
Inverter
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SMMBT3906LT1G
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