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SPB17N80C3
In Stock : 999
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Product Details
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SPB17N80C3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 670 mJ.This device has a continuous drain current (ID) of [17A], which is its maximum continuous current.It is [72 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 250mOhm exists between the drain and source.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 25 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.The maximum dual supply voltage can be supported by 800V.This transistor requires a drain-source voltage (Vdss) of 800V.
SPB17N80C3 Features
the avalanche energy rating (Eas) is 670 mJ
a continuous drain current (ID) of 17A
the turn-off delay time is 72 ns
single MOSFETs transistor is 250mOhm
a 800V drain to source voltage (Vdss)
SPB17N80C3 Applications
There are a lot of Infineon SPB17N80C3 applications of single MOSFETs transistors.
- PFC stages, hard switching PWM stages and resonant switching
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- DC-to-DC converters
- AC-DC Power Supply
- Power Management Functions
- Telecom 1 Sever Power Supplies
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- LCD/LED/ PDP TV Lighting
- Uninterruptible Power Supply
- Solar Inverter
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SPB17N80C3
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