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  • STD14NM50N

STD14NM50N

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Manufacturer No:

STD14NM50N

Manufacturer:

STMicroelectronics

HK JDW NO:

761-STD14NM50N

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Datasheet:

STD14NM50N

Description:

STD14NM50N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at HK JDW

Quantity:

In Stock : 999

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STD14NM50N Description


STD14NM50N is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.



STD14NM50N Features


  • 100% avalanche tested

  • Low gate input resistance

  • Low input capacitance and gate charge

  • Designed for automotive applications and AEC-Q101 qualified



STD14NM50N Applications


  • Enterprise systems

  • Personal electronics

  • Switching applications

  • Communications equipment


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

STD14NM50N

technical specifications, attributes, parameters and parts with similar specifications to STD14NM50N.

  • Type
    Parameter
    Select All
  • Lifecycle Status

    NRND (Last Updated: 8 months ago)

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-252-3, DPak (2 Leads + Tab), SC-63

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    150°C TJ

  • Packaging

    Cut Tape (CT)

  • Series

    MDmesh™ II

  • JESD-609 Code

    e3

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Resistance

    320mOhm

  • Terminal Finish

    Matte Tin (Sn) - annealed

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    SINGLE

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Base Part Number

    STD14

  • Pin Count

    3

  • JESD-30 Code

    R-PSSO-G2

  • Number of Elements

    1

  • Power Dissipation-Max

    90W Tc

  • Element Configuration

    Dual

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    90W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    10.2 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    320m Ω @ 6A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 100μA

  • Input Capacitance (Ciss) (Max) @ Vds

    816pF @ 50V

  • Current - Continuous Drain (Id) @ 25°C

    12A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    27nC @ 10V

  • Rise Time

    9ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±25V

  • Fall Time (Typ)

    32 ns

  • Turn-Off Delay Time

    42 ns

  • Continuous Drain Current (ID)

    12A

  • Threshold Voltage

    3V

  • Gate to Source Voltage (Vgs)

    25V

  • Drain to Source Breakdown Voltage

    500V

  • Pulsed Drain Current-Max (IDM)

    48A

  • Height

    2.4mm

  • Length

    6.6mm

  • Width

    6.2mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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