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  • STL52DN4LF7AG

STL52DN4LF7AG

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Manufacturer No:

STL52DN4LF7AG

Manufacturer:

STMicroelectronics

HK JDW NO:

761-STL52DN4LF7AG

Package:

8-PowerVDFN

Datasheet:

STL52DN4LF7AG

Description:

STL52DN4LF7AG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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STL52DN4LF7AG Description


The STL52DN4LF7AG is an N-channel Power MOSFET utilizing STripFET? F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.



STL52DN4LF7AG Features


  • AEC-Q101 qualified

  • Among the lowest RDS(on) on the market

  • Excellent FoM (figure of merit)

  • Low Crss/Ciss ratio for EMI immunity

  • High avalanche ruggedness

  • Wettable flank package



STL52DN4LF7AG Applications


  • Switching applications


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The following are some common countries' logistic time.

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Payment Method

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From $40.00 basic shipping fee depend on zone and country.
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From $40.00 basic shipping fee depend on zone and country.
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From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

STL52DN4LF7AG

technical specifications, attributes, parameters and parts with similar specifications to STL52DN4LF7AG.

  • Type
    Parameter
    Select All
  • Mounting Type

    Surface Mount

  • Package / Case

    8-PowerVDFN

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tape & Reel (TR)

  • Series

    Automotive, AEC-Q101, STripFET™ F7

  • Part Status

    Active

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Reach Compliance Code

    compliant

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • Power - Max

    65W Tc

  • FET Type

    2 N-Channel (Dual)

  • Rds On (Max) @ Id, Vgs

    16m Ω @ 6A, 10V

  • Vgs(th) (Max) @ Id

    2.5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    500pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    18A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    9.4nC @ 10V

  • Drain to Source Voltage (Vdss)

    40V

  • FET Feature

    Standard

  • RoHS Status

    RoHS Compliant

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