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  • STS9D8NH3LL

STS9D8NH3LL

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Manufacturer No:

STS9D8NH3LL

Manufacturer:

STMicroelectronics

HK JDW NO:

761-STS9D8NH3LL

Package:

8-SOIC (0.154, 3.90mm Width)

Datasheet:

-

Description:

STS9D8NH3LL datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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STS9D8NH3LL           Description


This device uses the latest advanced design rules of ST?ˉs STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 packages in DC-DC converters.


STS9D8NH3LL                Features


Optimal RDS(on) x Qg trade-off @ 4.5V

?? Conduction losses reduced

?? Switching losses reduced


STS9D8NH3LL               Application


?? Switching applications


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

STS9D8NH3LL

technical specifications, attributes, parameters and parts with similar specifications to STS9D8NH3LL.

  • Type
    Parameter
    Select All
  • Mounting Type

    Surface Mount

  • Package / Case

    8-SOIC (0.154, 3.90mm Width)

  • Number of Pins

    8

  • Transistor Element Material

    SILICON

  • Operating Temperature

    150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Series

    STripFET™

  • JESD-609 Code

    e4

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    8

  • ECCN Code

    EAR99

  • Resistance

    22MOhm

  • Terminal Finish

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Subcategory

    FET General Purpose Power

  • Max Power Dissipation

    2W

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Base Part Number

    STS9D8

  • Pin Count

    8

  • Number of Elements

    2

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    2W

  • FET Type

    2 N-Channel (Dual)

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    22m Ω @ 4A, 10V

  • Vgs(th) (Max) @ Id

    1V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    857pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    8A 9A

  • Gate Charge (Qg) (Max) @ Vgs

    10nC @ 4.5V

  • Rise Time

    32ns

  • Fall Time (Typ)

    8.5 ns

  • Turn-Off Delay Time

    18 ns

  • Continuous Drain Current (ID)

    9A

  • Gate to Source Voltage (Vgs)

    16V

  • Drain Current-Max (Abs) (ID)

    8A

  • Drain to Source Breakdown Voltage

    30V

  • Avalanche Energy Rating (Eas)

    150 mJ

  • FET Technology

    METAL-OXIDE SEMICONDUCTOR

  • FET Feature

    Logic Level Gate

  • Radiation Hardening

    No

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Mount

    Surface Mount

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