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Home Home Discrete Semiconductors Single MOSFETs Transistors STU6N62K3
STU6N62K3
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STU6N62K3

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Manufacturer No:

STU6N62K3

Manufacturer:

STMicroelectronics

HK JDW NO:

761-STU6N62K3

Package:

TO-251-3 Short Leads, IPak, TO-251AA

Datasheet:

STU6N62K3

Description:

STU6N62K3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at HK JDW

Quantity:

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In Stock : 999

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Product Details

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STU6N62K3 Description

The SuperMESH3?Power MOSFETs STU6N62K3 is the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
STU6N62K3 Features

100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitance
Improved diode reverse recovery characteristics
Zener-protected
STU6N62K3 Applications

Industrial
Aerospace & defenseAppliancesBuilding automationElectronic point of sale (EPOS)Factory automation & controlGrid infrastructureIndustrial transport (non-car & non-light truck)LightingMedicalMotor drivesPower deliveryPro audio, video & signageTest & measurement
Enterprise systems
Data center & enterprise computingEnterprise machineEnterprise projectors
Personal electronics
Connected peripherals & printersData storageGamingHome theater & entertainmentMobile phonesPC & notebooksPortable electronicsTabletsTVWearables (non-medical)
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4. Shipping Cost

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Payment Method

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The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

 DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

STU6N62K3

technical specifications, attributes, parameters and parts with similar specifications to STU6N62K3.

  • Type
    Parameter
    Select All

  • Factory Lead Time

    12 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 7 months ago)

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-251-3 Short Leads, IPak, TO-251AA

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    150°C TJ

  • Packaging

    Tube

  • Series

    SuperMESH3™

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn) - annealed

  • Additional Feature

    ULTRA LOW-ON RESISTANCE

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Peak Reflow Temperature (Cel)

    260

  • Base Part Number

    STU6N

  • Pin Count

    3

  • Number of Elements

    1

  • Power Dissipation-Max

    90W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    90W

  • Turn On Delay Time

    22 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    1.2 Ω @ 2.8A, 10V

  • Vgs(th) (Max) @ Id

    4.5V @ 50μA

  • Input Capacitance (Ciss) (Max) @ Vds

    875pF @ 50V

  • Current - Continuous Drain (Id) @ 25°C

    5.5A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    30nC @ 10V

  • Rise Time

    12.5ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±30V

  • Fall Time (Typ)

    19 ns

  • Turn-Off Delay Time

    49 ns

  • Continuous Drain Current (ID)

    5.5A

  • Threshold Voltage

    3.75V

  • Gate to Source Voltage (Vgs)

    30V

  • Drain to Source Breakdown Voltage

    620V

  • Pulsed Drain Current-Max (IDM)

    22A

  • Height

    6.9mm

  • Length

    6.6mm

  • Width

    2.4mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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