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ZTX758STZ
ZTX758STZ
233-ZTX758STZ
E-Line-3, Formed Leads
ZTX758STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
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ZTX758STZ Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 200mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 100mA.A -500mA continuous collector voltage is necessary to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.A transition frequency of 50MHz is present in the part.Maximum collector currents can be below 500mA volts.
ZTX758STZ Features
the DC current gain for this device is 40 @ 200mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 50MHz
ZTX758STZ Applications
There are a lot of Diodes Incorporated ZTX758STZ applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
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ZTX758STZ
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