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ZXT13N50DE6TA
ZXT13N50DE6TA
233-ZXT13N50DE6TA
SOT-23-6
ZXT13N50DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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ZXT13N50DE6TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 1A 2V DC current gain.A collector emitter saturation voltage of 145mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 180mV @ 400mA, 4A.Continuous collector voltages should be kept at 4A to achieve high efficiency.Keeping the emitter base voltage at 7.5V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As you can see, the part has a transition frequency of 115MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 4A volts is possible.
ZXT13N50DE6TA Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 145mV
the vce saturation(Max) is 180mV @ 400mA, 4A
the emitter base voltage is kept at 7.5V
the current rating of this device is 4A
a transition frequency of 115MHz
ZXT13N50DE6TA Applications
There are a lot of Diodes Incorporated ZXT13N50DE6TA applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
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ZXT13N50DE6TA
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