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Home Home Discrete Semiconductors Single BJT Transistors ZXTP05120HFFTA
ZXTP05120HFFTA
  • ZXTP05120HFFTA
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ZXTP05120HFFTA

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Manufacturer No:

ZXTP05120HFFTA

Manufacturer:

Diodes Incorporated

HK JDW NO:

233-ZXTP05120HFFTA

Package:

SOT-23-3 Flat Leads

Datasheet:

ZXTP05120HFFTA

Description:

ZXTP05120HFFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW

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ZXTP05120HFFTA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 3000 @ 1A 5V.A collector emitter saturation voltage of 900mV ensures maximum design flexibility.A VCE saturation (Max) of 2V @ 2mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages of -1A should be maintained to achieve high efficiency.With the emitter base voltage set at -10V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Breakdown input voltage is 120V volts.A maximum collector current of 1A volts can be achieved.

ZXTP05120HFFTA Features


the DC current gain for this device is 3000 @ 1A 5V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 2V @ 2mA, 2A
the emitter base voltage is kept at -10V
a transition frequency of 150MHz

ZXTP05120HFFTA Applications


There are a lot of Diodes Incorporated ZXTP05120HFFTA applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

ZXTP05120HFFTA

technical specifications, attributes, parameters and parts with similar specifications to ZXTP05120HFFTA.

  • Type
    Parameter
    Select All

  • Factory Lead Time

    15 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    SOT-23-3 Flat Leads

  • Number of Pins

    3

  • Weight

    48.789529mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2007

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn)

  • Subcategory

    Other Transistors

  • Max Power Dissipation

    2W

  • Terminal Position

    DUAL

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    40

  • Base Part Number

    ZXTP05120H

  • Pin Count

    3

  • Number of Elements

    1

  • Polarity

    PNP

  • Element Configuration

    Single

  • Power Dissipation

    1.5W

  • Transistor Type

    PNP - Darlington

  • Collector Emitter Voltage (VCEO)

    120V

  • Max Collector Current

    1A

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    3000 @ 1A 5V

  • Current - Collector Cutoff (Max)

    10μA

  • Vce Saturation (Max) @ Ib, Ic

    2V @ 2mA, 2A

  • Collector Emitter Breakdown Voltage

    120V

  • Max Frequency

    150MHz

  • Transition Frequency

    150MHz

  • Collector Emitter Saturation Voltage

    900mV

  • Max Breakdown Voltage

    120V

  • Frequency - Transition

    150MHz

  • Collector Base Voltage (VCBO)

    140V

  • Emitter Base Voltage (VEBO)

    -10V

  • Continuous Collector Current

    -1A

  • Turn Off Time-Max (toff)

    985ns

  • Turn On Time-Max (ton)

    768ns

  • Height

    1mm

  • Length

    3mm

  • Width

    1.7mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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