Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Min) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Collector Current-Max (IC) | Element Configuration | Power Dissipation | Turn On Delay Time | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Continuous Drain Current (ID) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Drain to Source Voltage (Vdss) | Collector-Emitter Voltage-Max | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MGD623N | Sanken | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Through Hole | Bulk | 2012 | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | TO-3P-3 Full Pack | Through Hole | 150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSFM-T3 | Not Qualified | 150W | 150W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 300 ns | 50A | 600V | 2.3V | POWER CONTROL | SILICON | 175 ns | 2.3V @ 15V, 50A | 500 ns | 300V, 50A, 39 Ω, 15V | 100A | 75ns/300ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGH30N60C2D4 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Through Hole | Tube | 2013 | Obsolete | 1 (Unlimited) | RoHS Compliant | TO-247-3 | Through Hole | 6.500007g | Standard | IXG*30N60 | 60A | 600V | 60A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRG4BAC50W-S | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | 2007 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | TO-273AA | Through Hole | Standard | 200W | 2.3V @ 15V, 27A | 600V | 55A | 46ns/120ns | 80μJ (on), 320μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGH24N60C4D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2011 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 190W | 190W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 25 ns | 56A | 600V | 2.7V | POWER CONTROL | SILICON | 52 ns | 2.7V @ 15V, 24A | 248 ns | PT | 20V | 5V | 360V, 24A, 10 Ω, 15V | 64nC | 130A | 21ns/143ns | 400μJ (on), 300μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
|
IKA15N65ET6XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | e3 | Tin (Sn) | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | -40°C | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | N-CHANNEL | 17A | POWER CONTROL | SILICON | 650V | 50 ns | 202 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXXH80N65B4H1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Through Hole | Tube | 2015 | GenX4™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 625W | Single | 625W | 150ns | 160A | 650V | 2V | 1.65V | 2V @ 15V, 80A | PT | 400V, 80A, 3 Ω, 15V | 120nC | 430A | 38ns/120ns | 3.77mJ (on), 1.2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRGS4715DPBF | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -40°C~175°C TJ | Standard | 100W | D2PAK | 86ns | 2V @ 15V, 8A | 650V | 21A | 400V, 8A, 50Ohm, 15V | 30nC | 24A | 30ns/100ns | 200μJ (on), 90μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STGWT60H65FB | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 32 Weeks | ACTIVE (Last Updated: 8 months ago) | Through Hole | Tube | Active | 1 (Unlimited) | EAR99 | 15.8mm | ROHS3 Compliant | Lead Free | No | 3 | TO-3P-3, SC-65-3 | 20.1mm | 5mm | Through Hole | 6.756003g | -55°C~175°C TJ | Standard | STGWT60 | 375W | 375W | Single | 80A | 650V | 650V | 1.6V | 2.3V @ 15V, 60A | Trench Field Stop | 400V, 60A, 5 Ω, 15V | 306nC | 240A | 51ns/160ns | 1.09mJ (on), 626μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRG4BC30FD-SPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tube | 2010 | Last Time Buy | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 31A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.699mm | 9.652mm | Surface Mount | -55°C~150°C TJ | 600V | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | Insulated Gate BIP Transistors | 100W | 1 | COLLECTOR | N-CHANNEL | Single | 100W | 42 ns | 31A | 600V | 1.8V | POWER CONTROL | SILICON | 27ns | 1.8V | 69 ns | 1.8V @ 15V, 17A | 620 ns | 20V | 6V | 480V, 17A, 23 Ω, 15V | 51nC | 124A | 42ns/230ns | 630μJ (on), 1.39mJ (off) | ||||||||||||||||||||||||||||||||||
 |
IXGA30N60C3C1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Surface Mount | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | unknown | Surface Mount | 1.59999g | -55°C~150°C TJ | Standard | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*30N60 | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 220W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 220W | 60A | 600V | 3V | POWER CONTROL | SILICON | 2.6V | 37 ns | 3V @ 15V, 20A | 160 ns | PT | 20V | 5.5V | 300V, 20A, 5 Ω, 15V | 38nC | 150A | 17ns/42ns | 120μJ (on), 90μJ (off) | ||||||||||||||||||||||||||||||||||
|
STGB4M65DF2 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | ACTIVE (Last Updated: 8 months ago) | Tape & Reel (TR) | M | Active | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | STGB4 | 68W | 133ns | 2.1V @ 15V, 4A | Trench Field Stop | 650V | 8A | 400V, 4A, 47 Ω, 15V | 15.2nC | 16A | 12ns/86ns | 40μJ (on), 136μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RGTH50TK65DGC11 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-3PFM, SC-93-3 | not_compliant | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 59W | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 58ns | POWER CONTROL | SILICON | 65 ns | 2.1V @ 15V, 25A | 172 ns | Trench Field Stop | 650V | 26A | 400V, 25A, 10 Ω, 15V | 49nC | 100A | 27ns/94ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGH64N60A3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Through Hole | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 460W | 1 | COLLECTOR | N-CHANNEL | Single | 460W | 600V | 1.35V | POWER CONTROL | SILICON | 600V | 65 ns | 1.35V @ 15V, 50A | 777 ns | PT | 480V, 50A, 3 Ω, 15V | 167nC | 400A | 26ns/268ns | 1.42mJ (on), 3.28mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
 |
IXGK72N60B3H1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*72N60 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 540W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 540W | 140 ns | 75A | 600V | 1.8V | POWER CONTROL | SILICON | 600V | 63 ns | 1.8V @ 15V, 60A | 370 ns | PT | 20V | 5V | 150ns | 480V, 50A, 3 Ω, 15V | 225nC | 450A | 31ns/152ns | 1.4mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||
 |
RJH60V1BDPP-M0#T2 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2012 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-220-3 Full Pack | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | RJH60V | 3 | Insulated Gate BIP Transistors | 30W | 30W | N-CHANNEL | Single | 25 ns | 16A | 600V | 2.2V | 2.2V @ 15V, 8A | Trench | 300V, 8A, 5 Ω, 15V | 19nC | 30ns/55ns | 17μJ (on), 110μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXXH30N65C4D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Tube | XPT™, GenX4™ | Active | TO-247-3 | compliant | Through Hole | -55°C~175°C TJ | Standard | 230W | 72ns | 2.5V @ 15V, 30A | 650V | 62A | 400V, 30A, 15 Ω, 15V | 47nC | 136A | 20ns/140ns | 1.1mJ (on), 400μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RJH60M3DPE-00#J3 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Surface Mount | Digi-Reel® | 2012 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | No | 83 | SC-83 | Surface Mount | 150°C TJ | Standard | RJH60M | 4 | 113W | 113W | Single | 600V | 90 ns | 35A | 600V | 600V | 2.3V @ 15V, 17A | Trench | 300V, 17A, 5 Ω, 15V | 60nC | 38ns/90ns | 290μJ (on), 290μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGH36N60B3D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*36N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 25ns | 600V | 1.8V | POWER CONTROL | SILICON | 45 ns | 1.8V @ 15V, 30A | 350 ns | PT | 20V | 5V | 160ns | 400V, 30A, 5 Ω, 15V | 80nC | 200A | 19ns/125ns | 540μJ (on), 800μJ (off) | |||||||||||||||||||||||||||||||||||||||
 |
STGY40NC60VD | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | ACTIVE (Last Updated: 8 months ago) | Through Hole | Tube | PowerMESH™ | Active | 1 (Unlimited) | 3 | EAR99 | 15.9mm | ROHS3 Compliant | Lead Free | 50A | No | 3 | TO-247-3 | No SVHC | 20.3mm | 5.3mm | Through Hole | -55°C~150°C TJ | 600V | Standard | e3 | Tin (Sn) | STGY40 | 3 | Insulated Gate BIP Transistors | 260W | 1 | N-CHANNEL | Single | 260W | 43 ns | 44ns | 80A | 600V | 600V | 50A | POWER CONTROL | 170 ns | SILICON | 19ns | 600V | 2.5V | 61 ns | 2.5V @ 15V, 40A | 247 ns | 20V | 5.75V | 390V, 40A, 3.3 Ω, 15V | 214nC | 43ns/140ns | 330μJ (on), 720μJ (off) | |||||||||||||||||||||||||||||||||
|
IRGP4690D-EPBF | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 454W | TO-247AD | 155ns | 2.1V @ 15V, 75A | 600V | 140A | 400V, 75A, 10Ohm, 15V | 150nC | 225A | 50ns/200ns | 2.47mJ (on), 2.16mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RJH60A83RDPD-A0#J2 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Surface Mount | Tape & Reel (TR) | Last Time Buy | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 4 | Insulated Gate BIP Transistors | 51W | 51W | N-CHANNEL | Single | 130 ns | 20A | 600V | 600V | 2.6V @ 15V, 10A | Trench | 300V, 10A, 5 Ω, 15V | 19.7nC | 31ns/54ns | 230μJ (on), 160μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGT32N90B2D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tube | 2005 | HiPerFAST™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | 4.500005g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*32N90 | 4 | R-PSSO-G2 | Not Qualified | 300W | 300W | 1 | COLLECTOR | N-CHANNEL | Single | 190 ns | 64A | 900V | 900V | POWER CONTROL | SILICON | 42 ns | 2.7V @ 15V, 32A | 690 ns | 720V, 32A, 5 Ω, 15V | 89nC | 200A | 20ns/260ns | 2.2mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
 |
IXYA20N120C3HV | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | XPT™, GenX3™ | Active | 2 | 2 | RoHS Compliant | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | Standard | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 278W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 29ns | POWER CONTROL | SILICON | 60 ns | 3.4V @ 15V, 20A | 220 ns | 1200V | 40A | 600V, 20A, 10 Ω, 15V | 53nC | 96A | 20ns/90ns | 1.3mJ (on), 1mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
STGD3NB60HDT4 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | PowerMESH™ | Obsolete | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | 6A | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | 600V | Standard | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 30 | STGD3 | 3 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 50W | 50W | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | N-CHANNEL | 95 ns | 10A | 600V | 2.8V | 6A | MOTOR CONTROL | SILICON | 600V | 25 ns | 2.8V @ 15V, 3A | 168 ns | 20V | 5V | 480V, 3A, 10 Ω, 15V | 21nC | 24A | 5ns/53ns | 33μJ (off) | ||||||||||||||||||||||||||||||||||||
 |
NGB8206NTF4 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tape & Reel (TR) | 2009 | Obsolete | 2 (1 Year) | 2 | EAR99 | 175°C | -55°C | Non-RoHS Compliant | Contains Lead | 20A | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | 400V | Logic | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 240 | 30 | NGB8206 | 4 | R-PSSO-G2 | Not Qualified | 150W | 1 | SINGLE WITH BUILT-IN DIODE AND RESISTOR | COLLECTOR | N-CHANNEL | 20A | 390V | 1.9V | AUTOMOTIVE IGNITION | 6500 ns | 1.9V @ 4.5V, 20A | 18500 ns | 300V, 9A, 1k Ω, 5V | 50A | -/5μs | |||||||||||||||||||||||||||||||||||||||||||||
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STGB7NC60HT4 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | PowerMESH™ | Obsolete | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | STGB7 | 80W | 80W | D2PAK | 37 ns | 25A | 600V | 2.5V | 2.5V @ 15V, 7A | 600V | 25A | 390V, 7A, 10Ohm, 15V | 35nC | 50A | 18.5ns/72ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APT80GA90LD40 | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 29 Weeks | Through Hole | Tube | 1999 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | Through Hole | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 625W | 1 | COLLECTOR | N-CHANNEL | Single | 25 ns | 145A | 900V | 900V | POWER CONTROL | 49 ns | 3.1V @ 15V, 47A | 320 ns | PT | 600V, 47A, 4.7 Ω, 15V | 200nC | 239A | 18ns/149ns | 1652μJ (on), 1389μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
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IGB01N120H2ATMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | no | Last Time Buy | 1 (Unlimited) | 2 | ROHS3 Compliant | Tin | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -40°C~150°C TJ | Standard | e3 | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | R-PSSO-G2 | Not Qualified | 28W | 28W | 1 | COLLECTOR | Halogen Free | NPN | Single | 3.2A | 1.2kV | 1.2kV | SWITCHING | SILICON | 2.8V @ 15V, 1A | 1200V | 800V, 1A, 241 Ω, 15V | 8.6nC | 3.5A | 13ns/370ns | 140μJ | |||||||||||||||||||||||||||||||||||||||||||||||
 |
IRG4PC40FPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Bulk | 2000 | Last Time Buy | 1 (Unlimited) | 3 | Through Hole | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | 49A | No | 3 | TO-247-3 | No SVHC | 20.7mm | 5.3086mm | Through Hole | -55°C~150°C TJ | 600V | Standard | SINGLE | Insulated Gate BIP Transistors | 160W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Dual | 160W | 26 ns | 49A | 600V | 1.7V | POWER CONTROL | 240 ns | SILICON | 18ns | 1.5V | 46 ns | 1.7V @ 15V, 27A | 690 ns | 20V | 6V | 480V, 27A, 10 Ω, 15V | 100nC | 200A | 26ns/240ns | 370μJ (on), 1.81mJ (off) | ||||||||||||||||||||||||||||||||||||
 |
HGT1S7N60A4DS | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | Obsolete | 1 (Unlimited) | RoHS Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | 125W | Single | 125W | 22 ns | 34A | 600V | 600V | 1.9V | 2.7V @ 15V, 7A | 390V, 7A, 25 Ω, 15V | 37nC | 56A | 11ns/100ns | 55μJ (on), 60μJ (off) |
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IRG4BAC50W-S Infineon Technologies
IRG4BAC50W-S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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IKA15N65ET6XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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NGB8206NTF4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW
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IGB01N120H2ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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